Electronic Devices Based on Transition Metal Dichalcogenides

2019 ◽  
pp. 331-355 ◽  
Author(s):  
Jiaxu Yan ◽  
Ze Xiang Shen
Keyword(s):  
Transition Metal ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

scholarly journals Optoelectronics with single layer group-VIB transition metal dichalcogenides

Nanophotonics ◽  
2018 ◽  
Vol 7 (10) ◽  
pp. 1589-1600 ◽  
Author(s):  
M.A. Khan ◽  
Michael N. Leuenberger
Keyword(s):  
Transition Metal ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Single Layer ◽  
Spin Orbit Coupling ◽  
Electroluminescent Devices ◽  
Metal Dichalcogenides ◽  
Fundamental Research ◽  
Excitonic Effects ◽  
Strong Spin

AbstractThe discovery of two-dimensional (2D) materials has opened up new frontiers and challenges for exploring fundamental research. Recently, single-layer (SL) transition metal dichalcogenides (TMDCs) have emerged as candidate materials for electronic and optoelectronic applications. In contrast to graphene, SL TMDCs have sizable band gaps that change from indirect to direct in SLs, which is useful in making thinner and more efficient electronic devices, such as transistors, photodetectors, and electroluminescent devices. In addition, SL TMDCs show strong spin-orbit coupling effects at the valence band edges, giving rise to the observation of valley-selective optical excitations. Here, we review the basic electronic and optical properties of pure and defected group-VIB SL TMDCs, with emphasis on the strong excitonic effects and their prospect for future optoelectronic devices.

Nanoscale electronic devices based on transition metal dichalcogenides

2D Materials ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 032004 ◽  
Author(s):  
Wenjuan Zhu ◽  
Tony Low ◽  
Han Wang ◽  
Peide Ye ◽  
Xiangfeng Duan
Keyword(s):  
Transition Metal ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides

2015 ◽  
Vol 44 (9) ◽  
pp. 2629-2642 ◽  
Author(s):  
Hualing Zeng ◽  
Xiaodong Cui
Keyword(s):  
Transition Metal ◽  
Spectroscopic Study ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Layered Materials ◽  
Two Dimensional ◽  
Group Vi ◽  
Intensive Research ◽  
Dimensional Group ◽  
Metal Dichalcogenides

The ultimate goal of making atomically thin electronic devices stimulates intensive research on layered materials, in particular the group-VI transition metal dichalcogenides (TMDs).

A label-free fluorescent probe for Hg2+ based on boron- and nitrogen-doped photoluminescent WS2

RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 49668-49674 ◽  
Author(s):  
Bo Feng ◽  
Xiaojia Liu ◽  
Yizhi Zheng ◽  
Qian Xiao ◽  
Na Wu ◽  
...  
Keyword(s):  
Transition Metal ◽  
Fluorescent Probe ◽  
Material Properties ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Basic Material ◽  
Label Free ◽  
Nitrogen Doped ◽  
Wide Range ◽  
Metal Dichalcogenides

The air-stable doping of transition-metal dichalcogenides is important in enabling a wide range of optoelectronic and electronic devices while exploring basic material properties.

Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges

2020 ◽  
Vol 5 (5) ◽  
pp. 787-807 ◽  
Author(s):  
Wugang Liao ◽  
Siwen Zhao ◽  
Feng Li ◽  
Cong Wang ◽  
Yanqi Ge ◽  
...  
Keyword(s):  
Transition Metal ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Next Generation ◽  
Interface Engineering ◽  
Recent Advances ◽  
Metal Dichalcogenides

This review presents recent advances and challenges in the interface engineering of 2D TMDCs and emerging electronics based on TMDCs.

Two-dimensional transition metal dichalcogenides: interface and defect engineering

2018 ◽  
Vol 47 (9) ◽  
pp. 3100-3128 ◽  
Author(s):  
Zehua Hu ◽  
Zhangting Wu ◽  
Cheng Han ◽  
Jun He ◽  
Zhenhua Ni ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Defect Engineering ◽  
Electronic And Optical Properties ◽  
Recent Advances ◽  
Metal Dichalcogenides

This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.

scholarly journals Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides

2018 ◽  
Vol 9 (40) ◽  
pp. 7727-7745 ◽  
Author(s):  
José Ramón Durán Retamal ◽  
Dharmaraj Periyanagounder ◽  
Jr-Jian Ke ◽  
Meng-Lin Tsai ◽  
Jr-Hau He
Keyword(s):  
Transition Metal ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Carrier Injection ◽  
Metal Dichalcogenides ◽  
Charge Carrier Injection ◽  
Current Engineering

This review intertwines current engineering strategies tailoring the carrier injection and carrier transport of two-dimensional transition metal dichalcogenides toward efficient electronic devices.

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