Potentiality of Impact Avalanche Transit Time Diode as Terahertz Source Based on Group IV and III–V Semiconducting Materials

2020 ◽  
pp. 65-75
Author(s):  
Girish Chandra Ghivela ◽  
S. J. Mukhopadhyay ◽  
Joydeep Sengupta ◽  
M. Mitra
Keyword(s):  
Transit Time ◽  
Group Iv ◽  
Semiconducting Materials ◽  
Terahertz Source

scholarly journals High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode

2014 ◽  
Vol 04 (04) ◽  
pp. 143-150 ◽  
Author(s):  
Pranati Panda ◽  
Satya Narayana Padhi ◽  
Gana Nath Dash
Keyword(s):  
Transit Time ◽  
High Efficiency ◽  
Terahertz Source

A Closed-Form Solution for the Low-Current Collector Transit Time in Group IV and Group III-V HBTs

2017 ◽  
Vol 64 (8) ◽  
pp. 3346-3352
Author(s):  
Michael Schroter ◽  
Tobias Nardmann ◽  
Gerald Wedel
Keyword(s):  
Closed Form ◽  
Transit Time ◽  
Closed Form Solution ◽  
Current Collector ◽  
Form Solution ◽  
Group Iv ◽  
Group Iii

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

Electron microscope studies of the plastic deformation of ternary alloys based on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 1120-1120
Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley
Keyword(s):  
Plastic Deformation ◽  
Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
The Other ◽  
Ternary Alloys ◽  
Dislocation Mobility ◽  
Semiconducting Materials ◽  
Micro Indentation

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.

Cerebral vascular mean transit time determined by PET and DSC-MRI

2005 ◽  
Vol 25 (1_suppl) ◽  
pp. S676-S676
Author(s):  
Masanobu Ibaraki ◽  
Hiroshi Ito ◽  
Eku Shimosegawa ◽  
Hideto Toyoshima ◽  
Keiichi Ishigame ◽  
...  
Keyword(s):  
Transit Time ◽  
Mean Transit Time ◽  
Dsc Mri ◽  
Cerebral Vascular

Transit-time effects in saturated absorption resonances

1986 ◽  
Vol 47 (12) ◽  
pp. 2025-2039 ◽  
Author(s):  
A. Titov ◽  
Yu. Malyshev ◽  
Yu. Rastorguev
Keyword(s):  
Transit Time ◽  
Time Effects ◽  
Saturated Absorption

ISOMER-SHIFT SYSTEMATICS OF 57Co IMPLANTED IN GROUP IV SEMICONDUCTORS

1976 ◽  
Vol 37 (C6) ◽  
pp. C6-893-C6-896 ◽  
Author(s):  
G. WEYER ◽  
G. GREBE ◽  
A. KETTSCHAU ◽  
B. I. DEUTCH ◽  
A. NYLANDSTED LARSEN ◽  
...  
Keyword(s):  
Isomer Shift ◽  
Group Iv ◽  
Group Iv Semiconductors
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