Electron microscope studies of the plastic deformation of ternary alloys based on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 1120-1120
Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley
Keyword(s):  
Plastic Deformation ◽  
Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
The Other ◽  
Ternary Alloys ◽  
Dislocation Mobility ◽  
Semiconducting Materials ◽  
Micro Indentation

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.

Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode

2015 ◽  
Vol 821-823 ◽  
pp. 563-566
Author(s):  
Hyun Jin Jung ◽  
Seung Bok Yun ◽  
In Ho Kang ◽  
Jeong Hyun Moon ◽  
Won Jeong Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Harmful Effect ◽  
Stacking Faults ◽  
Optical Microscope ◽  
Stacking Fault ◽  
Schottky Barrier Diode ◽  
The Other ◽  
Room Temperature Photoluminescence

The influence of stacking faults (SFs) and triangular defects (TDs) on the electrical properties of 4H-SiC Schottky barrier diode (SBD) were investigated. The SF types and locations were distinguished and mapped by using room-temperature photoluminescence (PL) and optical microscope. SBDs were fabricated including the location of SF’s and TD’s. The effects of the types of defects and its area portion in the fabricated SBDs were also investigated. Based on the present data, 3C-TD has more harmful effect rather than the other SFs. The fabricated SBDs including SFs showed that increase of area portion of SF’s also resulted increase of specific on resistance of SBDs.

Strain Hardening by High Density SISFs During Low Cycle Fatigue in Ni3(Al,Zr) Single Crystal

1994 ◽  
Vol 364 ◽  
Author(s):  
Yuefeng Gu ◽  
Yi Liu ◽  
Jianting Guo ◽  
Dongliang Lin
Keyword(s):  
Electron Microscope ◽  
Single Crystal ◽  
Strain Hardening ◽  
Room Temperature ◽  
Low Cycle Fatigue ◽  
Stacking Faults ◽  
Cyclic Strain ◽  
Cycle Fatigue ◽  
Transmission Electron ◽  
Stress Asymmetry

AbstractStress response and its correlation with dislocation substructures in Ni3(Al,Zr) single crystal fatigued at room temperature have been studied. Cyclic strain hardening was found to be asymmetric and increased with increasing applied cyclic strain. Transmission Electron Microscope (TEM) observation showed that there are a profusion superlattic intrinsic stacking faults (SISFs) in fatigued Ni3(Al,Zr) single crystal samples. The cyclic strain hardening and stress asymmetry are explained by the movement of the SISF.

Electron Microscopy investigations of buried Si3N4 isolation layers

1990 ◽  
Vol 48 (4) ◽  
pp. 642-643
Author(s):  
S.K. Maksimov ◽  
V.N. Kukin
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Cross Section ◽  
Room Temperature ◽  
Ion Beam ◽  
The Other ◽  
Silicon Epitaxial Layer ◽  
P Type ◽  
Structure Investigations ◽  
Plane View

Formation of buried Si3N4 layers obtained by using repeated cycles of implantation and annealing has been investigated. Structure investigations were made with the use of a CM30 Twin electron microscope (whose diaphragm is 0.18 nm-1 ). In HREM studies, axial micrographs in Si reflections of the 000, 111 and 220 types were employed. Two types of samples were used: "plane view" samples and those of a "cross section". Si3N4 precipitates were identified by application of the EELS method on the LN and Lsiedges.N+ - ions were implanted into silicon wafers (of p-type, (001), 10 Ω cm) at a room temperature- The dose pf ions implanted in each cycle was 5.1010 cm-2 . The total dose was 5.1017 cm-2 , The energy of ions - 150 keV, the current density of the ion beam 25 μA/cm-2 . Annealing in the atmosphere of nitrogen was made at 1100° C which lasted 2 hours after the first cycle of implantation; in the other cycles it lasted 0.5 hours at 850° C. After the operation of ion beam synthesis was completed a silicon epitaxial layer 0.8-1 μm thick was grown.

Transmission electron microscope investigation of indentation induced dislocation configurations on the (001) GaSb face

1994 ◽  
Vol 209 (3) ◽  
Author(s):  
J. Doerschel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
Electron Microscope Investigation ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Induced Dislocation

AbstractDislocation configurations induced by room temperature microindentations on the (001) face of GaSb (undoped and Te-doped) have been studied using high voltage transmission electron microscopy. Perfect and partial dislocations could be found in all four arms of the dislocation rosette around the indent. Microtwins and rarely single stacking faults are associated with the partials. Contrary to other binary III–V compounds, an “inverse” glide prism along the [1[unk]0]/[[unk]10] rosette arms is created and it is bounded by {111}

A Soft Ceramic Ti3SiC2 with Microscale Plasticity at Room Temperature

2007 ◽  
Vol 280-283 ◽  
pp. 1343-1346 ◽  
Author(s):  
Shi Bo Li ◽  
Hong Xiang Zhai
Keyword(s):  
Plastic Deformation ◽  
Surface Layer ◽  
Acid Solution ◽  
Basal Plane ◽  
Room Temperature ◽  
Damage Tolerance ◽  
Stacking Faults ◽  
Kink Band ◽  
Band Formation ◽  
Energy Absorbing

Microscale plasticity of Ti3SiC2 was investigated by Vickers hardness indentation. The surface layer of the hardness indentations was removed by acid solution to observe microstructure beneath the indentations, where a large number of bending, delamination and kinking grains were found. These features suggest that Ti3SiC2 is able to consume microdamage around the indentations. Numerous basal plane dislocations and stacking faults lying in Ti3SiC2 grains or accumulating at grain boundaries were observed. The basal plane dislocations play an important role in the microscale plastic deformation. The plasticity and damage tolerance for Ti3SiC2 at room temperature should be attributed to multiple energy absorbing mechanisms: grains bending, delamination, kink-band formation, and the basal plane slip, etc.

New method and treatment technique applied to interband transition in GaAs1−x Px ternary alloys

Open Physics ◽  
2011 ◽  
Vol 9 (3) ◽  
Author(s):  
Cristina-Mihaela Băleanu ◽  
Raoul Nigmatullin ◽  
Saime Cetin ◽  
Dumitru Băleanu ◽  
Suleyman Ozcelik
Keyword(s):  
Room Temperature ◽  
Interband Transition ◽  
The Other ◽  
Ternary Alloys ◽  
New Method ◽  
Treatment Technique ◽  
Nonlinear Fitting ◽  
Wide Range ◽  
Fitting Parameters ◽  
Good Agreement

AbstractIn this paper we presented a new method (Eigen-Coordinates (ECs)) that can be used for calculations of the critical points (CPs) energy of the interband-transition edges of the heterostructures. This new method is more accurate and complete in comparison with conventional ones and has a wide range of application for the calculation of the fitting parameters related to nontrivial functions that initially have nonlinear fitting parameters that are difficult to evaluate. The new method was applied to determine the CPs energies from the dielectric functions of the MBE grown GaAs1−xPx ternary alloys obtained using spectroscopic ellipsometry (SE) measurements at room temperature in the 0.5-5 eV photon energy region. The obtained results are in good agreement with the results of the other methods.

Effect of Vanadium on Plastic Deformation in Llo TiAl Compound Alloys

1988 ◽  
Vol 133 ◽  
Author(s):  
Sung H. Whang ◽  
Yoo-Dong Hahn
Keyword(s):  
Plastic Deformation ◽  
Yield Stress ◽  
Uniaxial Compression ◽  
Fracture Stress ◽  
Room Temperature ◽  
Stacking Faults ◽  
Aluminum Concentration ◽  
Stress And Strain ◽  
Thin Foils ◽  
Miniature Specimens

ABSTRACTTernary Ti-Al-V (Llo) alloys containing vanadium up to 10 at.% and aluminum in the range of 50–55 at.% were prepared. Miniature specimens machined from these alloys were deformed in uniaxial compression at room temperature.The yield stress, and fracture stress and strain were determined with respect to vanadium and aluminum concentration. The deformed alloys were electropolished into thin foils and studied by TEM. In particular, the types of dislocations, stacking faults and twins in the Ti-Al-V alloys were investigated by TEM.

scholarly journals The Deformation Behavior of Oxygen-Modified Ti-29Nb-13Ta-4.6Zr(wt.%)

2020 ◽  
Vol 321 ◽  
pp. 11003
Author(s):  
V. Khademi ◽  
H. Liu ◽  
M. Nakai ◽  
M. Niinomi ◽  
C.J. Boehlert
Keyword(s):  
Electron Microscope ◽  
Deformation Behavior ◽  
Room Temperature ◽  
Tensile Axis ◽  
Deformation Mode ◽  
The Other ◽  
Work Hardening Rate ◽  
Elongation To Failure ◽  
Deformation Modes ◽  
Scanning Electron

A series of Ti-29Nb-13Ta-4.6Zr(wt.%) {TNTZ} alloys containing either 0.1, 0.3 or 0.7(wt.%) oxygen (O) were room-temperature tensile tested inside a scanning electron microscope to evaluate the effect of O on the deformation evolution. The deformation modes observed for TNTZ-0.1O, which exhibited the largest elongation-to-failure and lowest strength of all the alloys, were deformation-induced α”-martensitic transformation, {332}<113> twinning, and <111> slip. For the other two alloys, <111> slip was the dominant deformation mode, where TNTZ-0.7O exhibited more homogeneous and extensive slip, a higher frequency of cross slip, and a higher work-hardening rate, all of which contributed to both its strength and elongation-to-failure being greater than that for TNTZ-0.3O. TNTZ-0.3O exhibited the greatest tendency for cracking, which generally occurred on grain boundaries perpendicular to the tensile axis, leading to the lowest elongation-to-failure of all the alloys.

Synthesis of a Metallic Ceramic -Ti3SiC2 by PDS Process and its Properties

2002 ◽  
Vol 755 ◽  
Author(s):  
ZhengMing Sun ◽  
Hitoshi Hashimoto ◽  
ZheFeng Zhang ◽  
SongLang Yang ◽  
Toshihiko Abe
Keyword(s):  
Thermal Conductivity ◽  
Plastic Deformation ◽  
Room Temperature ◽  
Single Phase ◽  
Sintering Temperature ◽  
Pulse Discharge ◽  
Mechanical Tests ◽  
The Other ◽  
Powder Mixtures ◽  
Comparable Performance

ABSTRACTPowder mixtures of Ti/Si/C, Ti/SiC/C, Ti/Si/TiC, Ti/SiC/TiC and Ti/TiSi2/TiC were used for the synthesis of Ti3SiC2 by using a pulse discharge sintering (PDS) process. The Ti/Si/TiC powder was found to be the best among the five powder mixtures for the Ti3SiC2 synthesis. The highest content of Ti3SiC2 can be improved to about 99wt% at the sintering temperature of 1300°C for 15 minutes. The relative density of all the synthesized samples is higher than 98–99% at the sintering temperature above 1275°C. The nearly single phase Ti3SiC2 was found to show plastic deformation at room temperature and a good machinability. Both electrical and thermal conductivity were found to be more than two times of the value of a control pure Ti sample. The high-temperature mechanical tests confirmed that the Ti3SiC2 samples synthesized by the PDS process displayed a comparable performance with those fabricated by the other techniques.

The Alteration of the Pore Spaces in Sandstones

1973 ◽  
Vol 31 ◽  
pp. 210-211
Author(s):  
R. E. Ferrell ◽  
G. G. Paulson
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
The Other ◽  
Coarse Grained ◽  
Depositional Fabric ◽  
Soluble Components ◽  
Scanning Electron ◽  
Shape And Size

The pore spaces in sandstones are the result of the original depositional fabric and the degree of post-depositional alteration that the rock has experienced. The largest pore volumes are present in coarse-grained, well-sorted materials with high sphericity. The chief mechanisms which alter the shape and size of the pores are precipitation of cementing agents and the dissolution of soluble components. Each process may operate alone or in combination with the other, or there may be several generations of cementation and solution.The scanning electron microscope has ‘been used in this study to reveal the morphology of the pore spaces in a variety of moderate porosity, orthoquartzites.

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