Semiconductor Spintronics

Spintronics ◽  
2021 ◽  
pp. 201-221
Author(s):  
Puja Dey ◽  
Jitendra Nath Roy
2015 ◽  
Vol 29 (35n36) ◽  
pp. 1550243
Author(s):  
A. Rossani

A new model, based on an asymptotic procedure for solving the spinor kinetic equations of electrons and phonons is proposed, which gives naturally the displaced Fermi–Dirac distribution function at the leading order. The balance equations for the electron number, energy density and momentum, plus the Poisson’s equation, constitute now a system of six equations. Moreover, two equations for the evolution of the spin densities are added, which account for a general dispersion relation.


2020 ◽  
Vol 6 (3) ◽  
pp. 113-123
Author(s):  
Arnold S. Borukhovich

The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown.


2020 ◽  
Vol 22 (20) ◽  
pp. 11663-11670
Author(s):  
Xianmin Zhang ◽  
Junwei Tong ◽  
Liuxia Ruan ◽  
Xiannian Yao ◽  
Lianqun Zhou ◽  
...  

Spin–orbit coupling has been regarded as the core interaction to determine the efficiency of spin conserved transport in semiconductor spintronics. Here, we show the spin filter effect should be responsible for the magnetoresistance of H2Pc device.


2007 ◽  
Vol 3 (3) ◽  
pp. 153-159 ◽  
Author(s):  
David D. Awschalom ◽  
Michael E. Flatté

2014 ◽  
Vol 251 (9) ◽  
pp. 1651-1651 ◽  
Author(s):  
Jürgen König ◽  
Michael Oestreich

Author(s):  
M. M. Glazov

Creation, detection, and manipulation of spin degrees of freedom of electrons and nuclei, phenomena of spin relaxation, decoherence and dephasing, and processes of spin transfer between different subsystems are among the most important problems studied in semiconductor spintronics. These effects are most pronounced in systems with localized charge carriers, such as semiconductor quantum dots. This chapter contains the motivation behind and a brief review of the material presented in the book. It also clarifies the logic of the presentation in further chapters. Chapter 1 may be helpful to readers willing to find appropriate material without going through the whole book, as it contains a concise overview of the other chapters.


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