Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold current

1996 ◽  
Vol 28 (10) ◽  
pp. 1229-1238 ◽  
Author(s):  
Shun Tung Yen ◽  
Chien Ping Lee
Keyword(s):  
Semiconductor Lasers ◽  
Threshold Current ◽  
Beam Divergence ◽  
Low Threshold

Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current

1998 ◽  
Vol 83 (1) ◽  
pp. 8-14 ◽  
Author(s):  
G. W. Yang ◽  
J. Y. Xu ◽  
Z. T. Xu ◽  
J. M. Zhang ◽  
L. H. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Theoretical Investigation ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Beam Divergence ◽  
Vertical Beam ◽  
Low Threshold

Low threshold current operation of 1.3 [micro sign]m narrow beam divergence tapered-thickness waveguide lasers

1997 ◽  
Vol 33 (1) ◽  
pp. 55 ◽  
Author(s):  
T. Yamamoto ◽  
H. Kobayashi ◽  
T. Ishikawa ◽  
T. Takeuchi ◽  
T. Watanabe ◽  
...  
Keyword(s):  
Threshold Current ◽  
Beam Divergence ◽  
Narrow Beam ◽  
Waveguide Lasers ◽  
Low Threshold ◽  
Current Operation

scholarly journals Performance characteristics of GaN/Al0.2Ga0.8N quantum dot laser at L=100Å

2018 ◽  
Vol 65 (1) ◽  
pp. 38
Author(s):  
Halima Bouchenafa ◽  
Boucif Benichou ◽  
Badra Bouabdallah
Keyword(s):  
Quantum Dot ◽  
Semiconductor Lasers ◽  
Current Density ◽  
Matrix Theory ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold ◽  
P Type ◽  
Density Matrix Theory

In this paper, a theoretical model is used to study the optical gain characteristics of  quantum dot lasers. The model is based on the density matrix theory of semiconductor lasers with relaxation broadening. The effect of doping with varying the side lengths of the box in the structure is taken into account. A comparative study of the gain spectra of p-doped, undoped and n-doped structures of  cubic quantum-dot (QD) laser respectively, is presented for various side lengths. The variation of peak gain on carrier density is also presented. The effect of side length on the variation in modal gain versus current density is plotted too. The results indicate that the p type doping is efficient to reach a better optical gain value, and to achieve low threshold current densities compared with undoped and  n-doped structures, and the optimum value for quantum dot width to achieve the lower threshold current density for the three cases is L=100A .   

QUANTUM STATE CONTROL IN SEMICONDUCTOR pn-JUNCTIONS (II): CONTROLLED SPONTANEOUS EMISSION IN QUANTUM WELL MICROCAVITY LASERS

1993 ◽  
Vol 07 (08) ◽  
pp. 1653-1695 ◽  
Author(s):  
YOSHIHISA YAMAMOTO ◽  
GUNNAR BJÖRK ◽  
ANDERS KARLSSON ◽  
HENRICH HEITMANN ◽  
FRANKLIN M. MATINAGA
Keyword(s):  
Semiconductor Lasers ◽  
Spontaneous Emission ◽  
Coupling Efficiency ◽  
Threshold Current ◽  
Low Noise ◽  
State Control ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Microcavity Lasers ◽  
Low Threshold

The principles and applications of controlled spontaneous emission in semiconductor microcavities are reviewed. The coupling efficiency of spontaneous emission into a lasing mode and the spontaneous emission rate can be modified by various microcavity structures. By increasing the coupling efficiency, semiconductor lasers with a very low threshold current, and semiconductors lasers and light emitting diodes with a high quantum efficiency, broad modulation bandwidth and low noise are expected.

Narrow-linewidth surface-emitting distributed feedback semiconductor lasers with low threshold current

2021 ◽  
Vol 135 ◽  
pp. 106631
Author(s):  
Yina Hai ◽  
Yonggang Zou ◽  
Xiaohui Ma ◽  
Jie Fan ◽  
Haizhu Wang ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Threshold Current ◽  
Distributed Feedback ◽  
Narrow Linewidth ◽  
Low Threshold
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