scholarly journals Waveguide Design Optimization for Long Wavelength Semiconductor Lasers with Low Threshold Current and Small Beam Divergence

2011 ◽  
Vol 02 (04) ◽  
pp. 225-230 ◽  
Author(s):  
Abdulrahman Al-Muhanna ◽  
Abdullah Alharbi ◽  
Abdelmajid Salhi
Keyword(s):  
Design Optimization ◽  
Semiconductor Lasers ◽  
Threshold Current ◽  
Beam Divergence ◽  
Long Wavelength ◽  
Low Threshold ◽  
Waveguide Design

Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current

1998 ◽  
Vol 83 (1) ◽  
pp. 8-14 ◽  
Author(s):  
G. W. Yang ◽  
J. Y. Xu ◽  
Z. T. Xu ◽  
J. M. Zhang ◽  
L. H. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Theoretical Investigation ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Beam Divergence ◽  
Vertical Beam ◽  
Low Threshold

Low threshold current operation of 1.3 [micro sign]m narrow beam divergence tapered-thickness waveguide lasers

1997 ◽  
Vol 33 (1) ◽  
pp. 55 ◽  
Author(s):  
T. Yamamoto ◽  
H. Kobayashi ◽  
T. Ishikawa ◽  
T. Takeuchi ◽  
T. Watanabe ◽  
...  
Keyword(s):  
Threshold Current ◽  
Beam Divergence ◽  
Narrow Beam ◽  
Waveguide Lasers ◽  
Low Threshold ◽  
Current Operation

scholarly journals Performance characteristics of GaN/Al0.2Ga0.8N quantum dot laser at L=100Å

2018 ◽  
Vol 65 (1) ◽  
pp. 38
Author(s):  
Halima Bouchenafa ◽  
Boucif Benichou ◽  
Badra Bouabdallah
Keyword(s):  
Quantum Dot ◽  
Semiconductor Lasers ◽  
Current Density ◽  
Matrix Theory ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold ◽  
P Type ◽  
Density Matrix Theory

In this paper, a theoretical model is used to study the optical gain characteristics of  quantum dot lasers. The model is based on the density matrix theory of semiconductor lasers with relaxation broadening. The effect of doping with varying the side lengths of the box in the structure is taken into account. A comparative study of the gain spectra of p-doped, undoped and n-doped structures of  cubic quantum-dot (QD) laser respectively, is presented for various side lengths. The variation of peak gain on carrier density is also presented. The effect of side length on the variation in modal gain versus current density is plotted too. The results indicate that the p type doping is efficient to reach a better optical gain value, and to achieve low threshold current densities compared with undoped and  n-doped structures, and the optimum value for quantum dot width to achieve the lower threshold current density for the three cases is L=100A .   

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