Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source

1994 ◽  
Vol 58 (2) ◽  
pp. 191-195 ◽  
Author(s):  
S. K. Zhang ◽  
K. Sugioka ◽  
J. Fan ◽  
K. Toyoda ◽  
S. C. Zou
Keyword(s):  
Excimer Laser ◽  
Laser Doping ◽  
Dopant Source

Fabrication of p+/n Ultra Shallow Junctions (USJ) in silicon by excimer laser doping from spin-on glass sources

2004 ◽  
Vol 810 ◽  
Author(s):  
S. Coutanson ◽  
E. Fogarassy ◽  
J. Venturini
Keyword(s):  
Excimer Laser ◽  
Surface Region ◽  
Oxide Glass ◽  
Near Surface ◽  
Laser Doping ◽  
Dopant Incorporation ◽  
Ultra Shallow Junctions ◽  
20 Nm ◽  
Short Time ◽  
Dopant Source

ABSTRACTIn this work was investigated a simple laser doping method employing doped oxide glass films as dopant source (up to 2.1021cm−3) which are deposited onto silicon by the spin coating technique. Both short (20 ns) and long (200 ns) pulse duration excimer laser beams were used to deposit a large amount of energy in a short time onto the near-surface region. Under suitable conditions, the irradiation leads to surface melting and dopant incorporation by liquid phase diffusion from the surface. Boron distribution profiles in the two pulses duration regimes were studied as well as their electrical properties, and the junction formation of less than 20 nm in depth was demonstrated.

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

2019 ◽  
Vol 963 ◽  
pp. 403-406
Author(s):  
Kaname Imokawa ◽  
Toshifumi Kikuchi ◽  
Kento Okamoto ◽  
Daisuke Nakamura ◽  
Akihiro Ikeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Low Cost ◽  
Device Fabrication ◽  
Contact Resistivity ◽  
Power Devices ◽  
High Concentration ◽  
Laser Doping ◽  
Krf Excimer Laser ◽  
Al Thin Film

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

Mechanisms and application of the Excimer laser doping from spin-on glass sources for USJ fabrication

2006 ◽  
Vol 252 (13) ◽  
pp. 4502-4505 ◽  
Author(s):  
S. Coutanson ◽  
E. Fogarassy ◽  
J. Venturini
Keyword(s):  
Excimer Laser ◽  
Laser Doping

Selective metallization ofn‐type GaAs formed by projection‐patterned excimer laser doping of Si

1989 ◽  
Vol 55 (7) ◽  
pp. 619-621 ◽  
Author(s):  
K. Sugioka ◽  
K. Toyoda ◽  
Y. Gomi ◽  
S. Tanaka
Keyword(s):  
Excimer Laser ◽  
Laser Doping

Low-temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

2019 ◽  
Author(s):  
Kaname Imokawa ◽  
Nozomu Tanaka ◽  
Akira Suwa ◽  
Daisuke Nakamura ◽  
Taizoh Sadoh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Laser Doping ◽  
Transistor Fabrication ◽  
Si Thin Film

scholarly journals ZnO diode fabricated by excimer-laser doping

2000 ◽  
Vol 76 (22) ◽  
pp. 3257-3258 ◽  
Author(s):  
Toru Aoki ◽  
Yoshinori Hatanaka ◽  
David C. Look
Keyword(s):  
Excimer Laser ◽  
Laser Doping
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