Low-temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

2019 ◽  
Author(s):  
Kaname Imokawa ◽  
Nozomu Tanaka ◽  
Akira Suwa ◽  
Daisuke Nakamura ◽  
Taizoh Sadoh ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Laser Doping ◽  
Transistor Fabrication ◽  
Si Thin Film

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

2019 ◽  
Vol 963 ◽  
pp. 403-406
Author(s):  
Kaname Imokawa ◽  
Toshifumi Kikuchi ◽  
Kento Okamoto ◽  
Daisuke Nakamura ◽  
Akihiro Ikeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Low Cost ◽  
Device Fabrication ◽  
Contact Resistivity ◽  
Power Devices ◽  
High Concentration ◽  
Laser Doping ◽  
Krf Excimer Laser ◽  
Al Thin Film

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

Letter: A low-cost low-temperature thin-film-transistor backplane based on oxide semiconductor

2012 ◽  
Vol 20 (4) ◽  
pp. 175 ◽  
Author(s):  
Linfeng Lan ◽  
Nana Xiong ◽  
Peng Xiao ◽  
Wen Shi ◽  
Miao Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Oxide Semiconductor

High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor

2002 ◽  
Vol 41 (Part 1, No. 6A) ◽  
pp. 3646-3650 ◽  
Author(s):  
Seiichiro Higashi ◽  
Daisuke Abe ◽  
Yasushi Hiroshima ◽  
Kazuyuki Miyashita ◽  
Takahiro Kawamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Interface Formation ◽  
High Quality ◽  
Si Thin Film

Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3700-3703 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Seiichi Kiyama ◽  
Shigeru Noguchi ◽  
Takashi Kuwahara ◽  
Satoshi Ishida ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Si Thin Film
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