Fast solid-phase crystallization of amorphous silicon films on glass using low-temperature multi-step rapid thermal annealing

1993 ◽  
Vol 56 (2) ◽  
pp. 123-126 ◽  
Author(s):  
Chang Woo Lee ◽  
Choochon Lee ◽  
Yong Tae Kim
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization

Solid-phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing

1998 ◽  
Vol 135 (1-4) ◽  
pp. 205-208 ◽  
Author(s):  
Yongqian Wang ◽  
Xianbo Liao ◽  
Zhixun Ma ◽  
Guozhen Yue ◽  
Hongwei Diao ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Crystallization ◽  
Dopant Activation

Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2150-2154 ◽  
Author(s):  
Jin-Wook Seo ◽  
Yoshitaka Kokubo ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

Uniform Poly-Si TFTs for AMOLEDs Using Field-Enhanced Rapid Thermal Annealing

2007 ◽  
Vol 124-126 ◽  
pp. 447-450 ◽  
Author(s):  
Hyoung June Kim
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Radiative Heating ◽  
Solid Phase Crystallization ◽  
Glass Substrates ◽  
Grain Structures ◽  
Amorphous Si ◽  
Si Thin Film

Polycrystalline Si thin film transistors (TFTs) have been fabricated through solid phase crystallization using field-enhanced rapid thermal annealing (FE-RTA) system. The system consists of inline furnace modules for preheating and cooling of the glass substrates and a process module for rapid radiative heating combined with alternating magnetic field induction. The FE-RTA system enables crystallization of amorphous Si at high throughputs without any glass damages. While the typical grain structures of poly-Si by FE-RTA are similar to those of solid phase crystallization, the residual amorphous Si and intragranular defects are reduced.

Comparison Between Rapid Thermal and Furnace Annealing for A-Si Solid Phase Crystallization

1996 ◽  
Vol 424 ◽  
Author(s):  
Reece Kingi ◽  
Yaozu Wang ◽  
Stephen J. Fonash ◽  
Osama Awadelkarim ◽  
John Mehlhaff
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Growth Time ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
Furnace Annealing ◽  
Lower Growth ◽  
Transient Time

AbstractRapid thermal annealing and furnace annealing for the solid phase crystallization of amorphous silicon thin films deposited using PECVD from argon diluted silane have been compared. Results reveal that the crystallization time, the growth time, and the transient time are temperature activated, and that the resulting polycrystalline silicon grain size is inversely proportional to the annealing temperature, for both furnace annealing and rapid thermal annealing. In addition, rapid thermal annealing was found to result in a lower transient time, a lower growth time, a lower crystallization time, and smaller grain sizes than furnace annealing, for a given annealing temperature. Interestingly, the transient time, growth time, and crystallization time activation energies are much lower for rapid thermal annealing, compared to furnace annealing.We propose two models to explain the observed differences between rapid thermal annealing and furnace annealing.

Microstructure of Poly-Si Obtained by Rapid Thermal Annealing of Amorphous Silicon Films

1994 ◽  
Vol 37-38 ◽  
pp. 287-292 ◽  
Author(s):  
J. Stoemenos ◽  
N.A. Economou ◽  
L. Haji ◽  
M. Bonnel ◽  
N. Duhamel ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Films
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