D.C. electrical conductivity of amorphous Si3N4-C composites prepared by chemical vapour deposition

1983 ◽  
Vol 18 (2) ◽  
pp. 383-390 ◽  
Author(s):  
Takashi Goto ◽  
Toshio Hirai
Keyword(s):  
Electrical Conductivity ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Amorphous Si3n4

scholarly journals In Situ Doping of Nitrogen in -Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Materials ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 410
Author(s):  
Youfeng Lai ◽  
Lixue Xia ◽  
Qingfang Xu ◽  
Qizhong Li ◽  
Kai Liu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Chemical Vapour Deposition ◽  
High Speed ◽  
Vapour Deposition ◽  
Volume Fraction ◽  
Chemical Vapour ◽  
Optical Transmittance ◽  
Undoped Sample ◽  
Maximum Value

Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field.

Electrical conductivity of Co3O4 films prepared by chemical vapour deposition

1998 ◽  
Vol 53 (3) ◽  
pp. 225-230 ◽  
Author(s):  
Chun-Shen Cheng ◽  
M. Serizawa ◽  
H. Sakata ◽  
T. Hirayama
Keyword(s):  
Electrical Conductivity ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour

scholarly journals Novel 3-Dimensional Cotton-Like Graphenated-Carbon Nanotubes Synthesized via Floating Catalyst Chemical Vapour Deposition Method for Potential Gas-Sensing Applications

2019 ◽  
Vol 2019 ◽  
pp. 1-10
Author(s):  
Ismayadi Ismail ◽  
Md Shuhazlly Mamat ◽  
Noor Lyana Adnan ◽  
Zainab Yunusa ◽  
Intan Helina Hasan
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Conductivity ◽  
Gas Sensor ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Gas Sensing ◽  
Chemical Vapour ◽  
Injection Rate ◽  
Sensing Applications ◽  
Graphenated Carbon Nanotubes

We reported the synthesis of graphenated-carbon nanotubes (G-CNTs) using a floating catalyst chemical vapour deposition (FCCVD) method and formed a bulk-cotton-like structure. The objectives of this work were to study the effect of the injection rate parameter of the carbon source on the formation of G-CNTs and CNTs and later to test them as an ammonia gas sensor. Ethanol, thiophene, and ferrocene were mixed and injected into FCCVD at 1150°C. The as-synthesized samples were then characterized using FESEM, HRTEM, TGA, Raman spectroscopy, XPS, and electrical conductivity measurement. We found that the injection rate of 5 ml/h was suitable for the formation of G-CNTs and a higher injection rate resulted in the formation of CNTs. Our measurement showed that the electrical conductivity response of G-CNTs was higher compared to that of CNTs. The gas-sensing performance of the gas sensor made of G-CNT materials also showed good response compared to that of CNTs. This experimental work paved the way for how we can selectively synthesize CNTs and G-CNTs via the FCCVD method, and G-CNTs have proven to be a better material for gas sensors.

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings

Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-373-Pr8-380 ◽  
Author(s):  
P. Sourdiaucourt ◽  
A. Derré ◽  
P. Delhaès ◽  
P. David
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hafnium Carbide ◽  
Experimental Conditions
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