D.C. electrical conductivity of amorphous Si3N4-C composites prepared by chemical vapour deposition

Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field.

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Low-temperature electrical conductivity and optical absorption edge of ZnO films prepared by chemical vapour deposition

phys stat sol (a) ◽

10.1002/pssa.2211480217 ◽

1995 ◽

Vol 148 (2) ◽

pp. 485-495 ◽

Cited By ~ 110

Author(s):

Y. Natsume ◽

H. Sakata ◽

T. Hirayama

Keyword(s):

Electrical Conductivity ◽

Low Temperature ◽

Optical Absorption ◽

Chemical Vapour Deposition ◽

Absorption Edge ◽

Vapour Deposition ◽

Chemical Vapour ◽

Zno Films ◽

Optical Absorption Edge

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High temperature evaporation characteristics of amorphous Si3N4-C composite prepared by chemical vapour deposition

Journal of Materials Science ◽

10.1007/bf01086480 ◽

1987 ◽

Vol 22 (8) ◽

pp. 2842-2846 ◽

Cited By ~ 4

Author(s):

Takashi Goto ◽

Toshio Hirai

Keyword(s):

High Temperature ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Amorphous Si3n4

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Electrical conductivity of Co3O4 films prepared by chemical vapour deposition

Materials Chemistry and Physics ◽

10.1016/s0254-0584(98)00044-3 ◽

1998 ◽

Vol 53 (3) ◽

pp. 225-230 ◽

Cited By ~ 163

Author(s):

Chun-Shen Cheng ◽

M. Serizawa ◽

H. Sakata ◽

T. Hirayama

Keyword(s):

Electrical Conductivity ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour

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Preparation of amorphous Si3N4-C plate by chemical vapour deposition

Journal of Materials Science ◽

10.1007/bf00552054 ◽

1981 ◽

Vol 16 (1) ◽

pp. 17-23 ◽

Cited By ~ 34

Author(s):

Toshio Hirai ◽

Takashi Goto

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Amorphous Si3n4

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Novel 3-Dimensional Cotton-Like Graphenated-Carbon Nanotubes Synthesized via Floating Catalyst Chemical Vapour Deposition Method for Potential Gas-Sensing Applications

Journal of Nanomaterials ◽

10.1155/2019/5717180 ◽

2019 ◽

Vol 2019 ◽

pp. 1-10

Author(s):

Ismayadi Ismail ◽

Md Shuhazlly Mamat ◽

Noor Lyana Adnan ◽

Zainab Yunusa ◽

Intan Helina Hasan

Keyword(s):

Carbon Nanotubes ◽

Electrical Conductivity ◽

Gas Sensor ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Gas Sensing ◽

Chemical Vapour ◽

Injection Rate ◽

Sensing Applications ◽

Graphenated Carbon Nanotubes

We reported the synthesis of graphenated-carbon nanotubes (G-CNTs) using a floating catalyst chemical vapour deposition (FCCVD) method and formed a bulk-cotton-like structure. The objectives of this work were to study the effect of the injection rate parameter of the carbon source on the formation of G-CNTs and CNTs and later to test them as an ammonia gas sensor. Ethanol, thiophene, and ferrocene were mixed and injected into FCCVD at 1150°C. The as-synthesized samples were then characterized using FESEM, HRTEM, TGA, Raman spectroscopy, XPS, and electrical conductivity measurement. We found that the injection rate of 5 ml/h was suitable for the formation of G-CNTs and a higher injection rate resulted in the formation of CNTs. Our measurement showed that the electrical conductivity response of G-CNTs was higher compared to that of CNTs. The gas-sensing performance of the gas sensor made of G-CNT materials also showed good response compared to that of CNTs. This experimental work paved the way for how we can selectively synthesize CNTs and G-CNTs via the FCCVD method, and G-CNTs have proven to be a better material for gas sensors.

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