A stochastic model of three-dimensional crystal growth

1991 ◽  
Vol 63 (5-6) ◽  
pp. 987-1003 ◽  
Author(s):  
Claude Garrod
Keyword(s):  
Crystal Growth ◽  
Stochastic Model ◽  
Three Dimensional ◽  
Dimensional Crystal

scholarly journals EXPOENTE DE AVRAMI PELA EQUAÇÃO DE JMAK PARA MÉTODO NÃO-ISOTÉRMICO DE ANÁLISE TÉRMICA

2018 ◽  
Vol 1 (2) ◽  
Author(s):  
Salmo Moreira Sidel ◽  
Elio Idalgo ◽  
Keizo Yukimitu ◽  
João Carlos Silos Moraes ◽  
Fabio Alencar Dos Santos
Keyword(s):  
Crystal Growth ◽  
General Theory ◽  
Isothermal Crystallization ◽  
Crystallization Process ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Nucleation Process ◽  
Vitreous System ◽  
Isothermal Measurements ◽  
Dimensional Crystal

This work reports a discussion about of the general theory for phase transformations of Melh-Johnson-Avrami-Kolmogorov in process involving non-isothermal crystallization. This model allows determine as occurs the mechanism of the nucleus formation and of growth of crystalline phases during the crystallization process. To demonstrate the validity this theory, the Avrami exponent (n) of the LiO2-TeO2-WO3 vitreous system was determined from DSC non-isothermal measurements. The obtained results indicate that the nucleation process is volumetric with two-dimensional or three-dimensional crystal growth. DOI: http://dx.doi.org/10.30609/JETI.2018-2.5566

scholarly journals Multilayer aberration correction for depth-independent three-dimensional crystal growth in glass by femtosecond laser heating

2013 ◽  
Vol 30 (5) ◽  
pp. 1234 ◽  
Author(s):  
Adam Stone ◽  
Himanshu Jain ◽  
Volkmar Dierolf ◽  
Masaaki Sakakura ◽  
Yasuhiko Shimotsuma ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Femtosecond Laser ◽  
Laser Heating ◽  
Three Dimensional ◽  
Aberration Correction ◽  
Dimensional Crystal

scholarly journals Investigation of Misfit Dislocation Configurations in Mbe-Grown InGaAs Layers on Misaligned GaAs (001) Substrates

1992 ◽  
Vol 283 ◽  
Author(s):  
P. Werner ◽  
N. D. Zakharov ◽  
Y. Chen ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Roughness ◽  
Crystal Growth ◽  
Three Dimensional ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
20 Nm ◽  
Thick Layers ◽  
Dimensional Crystal

ABSTRACTThe configurations of misfit dislocations in In0.2Ga0.8As/GaAs(001) hetero structures grown on slightly misoriented substrates was investigated by transmission electron microscopy (TEM). Layers 6 nm, 20 nm and 40 nm thick were grown by MBE. The substrate was tilted in [110], [110], [120], [210] and [010] directions at angles between 0° and 10°. Only in the 40 nm thick layers networks of 60° and 90° dislocations were formed. Misfit dislocations were found at the interface in <110> directions. In the substrate tilting range between 0° and 4° the changes in dislocation density can be explained by the differentcharacter of α and β dislocations. For a substrate tilting above 6° the different dislocation sets show an increased anisotropy. The misfit dislocations at the interface were decorated by In atoms. The influence of three-dimensional crystal growth on increasing surface roughness is discussed.

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