The correlation of various properties of thin films of MoO3 and of the mixed oxide systems MoO3-In2O3 and MoO3-SiO

1990 ◽  
Vol 25 (11) ◽  
pp. 4918-4928 ◽  
Author(s):  
M. Anwar ◽  
C. A. Hogarth
Keyword(s):  
Thin Films ◽  
Mixed Oxide ◽  
Oxide Systems

scholarly journals Synthesis, Crystallography, Microstructure, Crystal Defects, Optical and Optoelectronic Properties of ZnO:CeO2 Mixed Oxide Thin Films

Photonics ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 112
Author(s):  
Qais M. Al-Bataineh ◽  
Mahmoud Telfah ◽  
Ahmad A. Ahmad ◽  
Ahmad M. Alsaad ◽  
Issam A. Qattan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Mixed Oxide ◽  
Visible Region ◽  
Functional Materials ◽  
Crystal Defects ◽  
Optoelectronic Properties ◽  
Oxide Thin Films ◽  
Pure Ceo2

We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors.

scholarly journals Evolution of Microstructures and Interfaces in Compositionally Graded Mixed Oxide Thin Films for Nanoelectronics and Energy

2019 ◽  
Vol 25 (S2) ◽  
pp. 2298-2299
Author(s):  
Avnish Singh Pal ◽  
Ankit Singh ◽  
RK Mandal ◽  
Joysurya Basu
Keyword(s):  
Thin Films ◽  
Mixed Oxide ◽  
Oxide Thin Films

Development of Non-Silicate Microporous Membranes with High Chemical Resistance

2006 ◽  
Vol 45 ◽  
pp. 2043-2048
Author(s):  
Undine Aust ◽  
Gerhard Tomandl
Keyword(s):  
Mixed Oxide ◽  
Chemical Resistance ◽  
Sol Gel ◽  
Positive Influence ◽  
Oxide Systems ◽  
Polymeric Sol ◽  
High Chemical Resistance ◽  
Gel Technique ◽  
Final Composition ◽  
Oxide Membranes

TiO2-ZrO2 mixed-oxide membranes were prepared via polymeric sol-gel technique. The final composition is already predefined during the preparation of the sols by using the corresponding quantities of the starting alkoxides. The mixed-oxide membranes were characterized by Xray diffraction, nitrogen sorption, and field emission scanning electron microscopy as well as filtration and corrosion tests. The observed results prove the positive influence on the investigated properties by addition of a second oxide. Depending on the composition of the mixed-oxide membranes, a remarkable increase in the crystallization temperatures is demonstrated. Using mixed-oxide systems, the retardation of grain growth is confirmed.

Electrical and Optical Properties of ZnO:Ag Thin-Films Depend on Lamination Formation by DC Magnetron Sputtering

2015 ◽  
Vol 1110 ◽  
pp. 211-217
Author(s):  
Jin Woo Lee ◽  
Yun Hae Kim ◽  
Chang Wook Park
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Stacking Sequence ◽  
Flat Panel Displays ◽  
Oxide Systems ◽  
Thin Film Layer ◽  
Tin Oxides ◽  
Impurity Doped ◽  
Indium Oxides ◽  
Film Layer

Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.

Sub-ppm level detection of trimethylamine using V2O3-Cu2O mixed oxide thin films

2019 ◽  
Vol 45 (15) ◽  
pp. 19528-19533 ◽  
Author(s):  
Veena Mounasamy ◽  
Ganesh Kumar Mani ◽  
Dhivya Ponnusamy ◽  
Kazuyoshi Tsuchiya ◽  
Arun K. Prasad ◽  
...  
Keyword(s):  
Thin Films ◽  
Mixed Oxide ◽  
Oxide Thin Films ◽  
Ppm Level
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