Application of a glow discharge ion gun to sputtering yield measurements

1986 ◽  
Vol 5 (10) ◽  
pp. 1061-1062 ◽  
Author(s):  
Zbigniew W. Kowalski
2007 ◽  
Vol 353-358 ◽  
pp. 1891-1894
Author(s):  
Zhi Yong He ◽  
Xiao Feng Wang ◽  
Ying Fan ◽  
Zhen Xia Wang ◽  
Xiao Ping Liu ◽  
...  

Sputtering rate Sr was proposed as an alternative parameter instead of sputtering yield Y to calibrate the sputtering ability of the target, defined as the mass loss of the target per unit time and sputtering current. The approach is more reliable for glow discharge processes since the intense backscattering effect was taken into consideration. The effects of processing parameters on Sr were investigated through orthogonal test, the results indicated that target temperature affects Sr obviously, and among the discharge parameters, the target voltage and discharge pressure were the governing factors. Through regression analysis, the sputtering rate Sr was expressed as a function of sputtering voltage and discharge pressure which could be used to evaluate or predict the real output of the sputtering target.


1994 ◽  
Vol 48 (4) ◽  
pp. 426-435
Author(s):  
Robert D. Govier ◽  
Edward H. Piepmeier

Electron spectroscopy for chemical analysis (ESCA) is used to study selected regions of a brass surface subjected to gas-jet-enhanced sputtering in a glow discharge. Gas jets directed at the sample surface during sputtering in a glow discharge increase the removal rate of sample material from the surface and cause changes to the surface which are visually evident in the formation of craters and surface deposits. Changes in chemical composition of these regions are observed when successive atomic layers are removed from the sample by the ion beam etching accessory in the ESCA spectrometer. The effects of ion bombardment can be explained in terms of the selective sputtering of one bulk component over another. The surfaces in the sputtered craters were found to be depleted of the higher-sputtering-yield component, Zn, when compared to the bulk composition. In a deposit, the component with the highest sputtering yield was found to be more concentrated in layers closest to the bulk material. The component with the lowest sputtering yield was found at relatively higher concentrations nearest the deposit surface. The component with the higher sputtering yield is selectively sputtered first during the glow discharge, and consequently is deposited with a higher concentration closest to the bulk, the converse being true for the lowest-sputtering-yield component.


2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-357-Pr3-362 ◽  
Author(s):  
D. D. Papakonstantinou ◽  
D. Mataras ◽  
Arefi-Khonsari

1982 ◽  
Vol 43 (6) ◽  
pp. 875-881 ◽  
Author(s):  
B. Dubreuil ◽  
P. Pignolet ◽  
A. Catherinot ◽  
P. Davy

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-1025-C4-1028 ◽  
Author(s):  
R. Carius ◽  
R. Fischer ◽  
E. Holzenkämpfer
Keyword(s):  

2010 ◽  
Vol 130 (11) ◽  
pp. 1004-1008
Author(s):  
Shinobu Hayashi ◽  
Kohki Satoh ◽  
Hidenori Itoh

2011 ◽  
Vol 131 (9) ◽  
pp. 757-763
Author(s):  
Yasuhiro Itoh ◽  
Takamasa Oshita ◽  
Kohki Satoh ◽  
Hidenori Itoh

2003 ◽  
Vol 79 (10) ◽  
pp. 1002-1008 ◽  
Author(s):  
Koichi TAKAKI ◽  
Tamiya FUJIWARA ◽  
Fumiyoshi TOCHIKUBO

Author(s):  
Sergey S. Sysoev ◽  
Almaz I. Saifutdinov ◽  
Stepan I. Eliseev ◽  
A. A. Kudryavtsev ◽  
Vladimir S. Bekasov

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