Evidence for muonium emission from an SiO2 layer on n-type Si and the positive muon state in Si

1991 ◽  
Vol 65 (1-4) ◽  
pp. 1071-1080 ◽  
Author(s):  
A. Matsushita ◽  
Y. Miyake ◽  
Y. Murata ◽  
K. Nishiyama ◽  
K. Nagamine ◽  
...  
Keyword(s):  
Positive Muon ◽  
Sio2 Layer ◽  
Muon State

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

A proposed study on trapping of positive muon in defects in the vicinity of metal surfaces

1997 ◽  
Vol 71-72 (1-3) ◽  
pp. 289-298
Author(s):  
A Matsushita
Keyword(s):  
Metal Surfaces ◽  
Positive Muon

scholarly journals Sidewall Slope Control of InP Via Holes for 3D Integration

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 89
Author(s):  
Jongwon Lee ◽  
Kilsun Roh ◽  
Sung-Kyu Lim ◽  
Youngsu Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Sio2 Layer ◽  
Etch Depth ◽  
Rf Power ◽  
3D Integration ◽  
Inductively Coupled ◽  
Wide Range ◽  
Via Holes ◽  
Dry Etch ◽  
Icp Etcher

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of the InP via holes in a wide range of 36 to 69 degrees is possible by changing the RF power in the etcher and introducing a wet-etched SiO2 layer with a small sidewall slope of 2 degrees; this wide slope control is due to the change of InP-to-SiO2 selectivity with RF power.

scholarly journals Negative-ion implantation into thin SiO2 layer for defined nanoparticle formation

2006 ◽  
Vol 77 (3) ◽  
pp. 03A510 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Nobutoshi Arai ◽  
Naoyuki Gotoh ◽  
Takashi Minotani ◽  
Toyoji Ishibashi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Sio2 Layer ◽  
Negative Ion ◽  
Nanoparticle Formation

The Positive Muon as a Dynamic Structural Probe in Muoxyalkyl Radicals (R2C⋅—O—Mu)

1996 ◽  
Vol 34 (8) ◽  
pp. 631-637 ◽  
Author(s):  
Christopher J. Rhodes ◽  
Martyn C. R. Symons
Keyword(s):  
Positive Muon ◽  
Structural Probe

scholarly journals The positive muon and the positron as probes of defects

1981 ◽  
Vol 8 (4-6) ◽  
pp. 687-700
Author(s):  
K. G. Lynn
Keyword(s):  
Positive Muon

Electric-field gradient at oxygen sites in RBCO: Effects from a positive muon

1994 ◽  
Vol 86 (1) ◽  
pp. 561-567 ◽  
Author(s):  
T. R. Adams ◽  
R. L. Lichti ◽  
T. L. Gibson
Keyword(s):  
Electric Field ◽  
Electric Field Gradient ◽  
Field Gradient ◽  
Positive Muon

Resonance raman scattering in Ge nanoislands grown on a Si(111) substrate coated with an ultrathin SiO2 layer

2003 ◽  
Vol 37 (10) ◽  
pp. 1190-1194 ◽  
Author(s):  
V. A. Volodin ◽  
M. D. Efremov ◽  
A. I. Nikiforov ◽  
D. A. Orekhov ◽  
O. P. Pchelyakov ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Resonance Raman ◽  
Sio2 Layer ◽  
Resonance Raman Scattering

Effects of SiO2 layer on the performance of a LNOI Acoustic Wave Resonator

2021 ◽  
Author(s):  
Jordi Verdu ◽  
Patricia Silveira ◽  
Eloi Guerrero ◽  
Lluis Acosta ◽  
Pedro De Paco
Keyword(s):  
Acoustic Wave ◽  
Sio2 Layer ◽  
Wave Resonator
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