X-Ray diffraction analysis and transmission electron microscopic examination of globular dentin

1991 ◽  
Vol 48 (3) ◽  
pp. 190-195 ◽  
Author(s):  
Keiko Abe ◽  
Yoko Masatomi ◽  
Yutaka Moriwaki ◽  
Takashi Ooshima
Keyword(s):  
Diffraction Analysis ◽  
Microscopic Examination ◽  
Electron Microscopic Examination ◽  
X Ray Diffraction ◽  
Electron Microscopic ◽  
X Ray ◽  
Transmission Electron ◽  
Transmission Electron Microscopic

Synthesis of nanometer-sized particles of barium orthotitanate prepared through a modified reverse micellar route: Structural characterization, phase stability and dielectric properties

2004 ◽  
Vol 19 (10) ◽  
pp. 2905-2912 ◽  
Author(s):  
Tokeer Ahmad ◽  
Ashok K. Ganguli
Keyword(s):  
Martensitic Transition ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Electron Microscopic ◽  
X Ray ◽  
Transmission Electron ◽  
Transmission Electron Microscopic ◽  
Microscopic Studies ◽  
Size Of Particles ◽  
Reverse Micellar

Nanoparticles of barium orthotitanate (Ba2TiO4) was obtained using microemulsions (avoiding Ba-alkoxide). Powder x-ray diffraction studies of the powder after calcining at 800 °C resulted in a mixture of orthorhombic (70%) and monoclinic (30%) phases. The high-temperature orthorhombic form present at 800 °C was due to the small size of particles obtained by the reverse micellar route. Pure orthorhombic Ba2TiO4 was obtained on further sintering at 1000 °C with lattice parameters a = 6.101(2) Å, b =22.94(1) Å, c = 10.533(2) Å (space group, P21nb). The particle size obtained from x-ray line broadening studies and transmission electron microscopic studies was found to be 40–50 nm for the powder obtained after heating at 800 °C. Sintering at 1000 °C showed increase in grain size up to 150 nm. Our studies corroborate well with the presence of a martensitic transition in Ba2TiO4. The dielectric constant was found to be 40 for Ba2TiO4 (at 100 kHz) for samples sintered at 1000 °C. The dielectric loss obtained was low (0.06) at 100 kHz.

Bicontinuous Cubic Phase as a Matrix for the Synthesis of Semiconductor Nanocrystallites

1996 ◽  
Vol 431 ◽  
Author(s):  
Jianping Yang ◽  
Syed Qadri ◽  
Banahalli Ratna
Keyword(s):  
Size Distribution ◽  
Cubic Phase ◽  
Lipid Matrix ◽  
X Ray Diffraction ◽  
Electron Microscopic ◽  
X Ray ◽  
Transmission Electron ◽  
Transmission Electron Microscopic ◽  
Bicontinuous Cubic ◽  
First Time

AbstractBicontinuous cubic phase of lipid has been utilized for the first time as a matrix to synthesize II–VI (CdS) and IV–VI (PbS) semiconductor nanocrystallites. The nanoparticles were isolated from the lipid matrix and stabilized by capping with a thiol compound before purification. Two different sizes (2.3 nm and 3.0 nm) of CdS particles were prepared by varying the conditions of preparation. The size was determined by a combination of UV-vis absorption spectra and X-ray diffraction (XRD). The steep absorption edges of the two CdS samples indicate very narrow size distribution. XRD and transmission electron microscopic imaging of PbS nanocrystallites revealed that the size was 4.9 nm with nearly monodispersed size distribution.

High Temperature MOVPE Growth of AlxGa1−xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices

2006 ◽  
Vol 955 ◽  
Author(s):  
Balakrishnan Krishnan ◽  
Masataka Imura ◽  
Kazuyoshi Iida ◽  
Kentaro Nagamatsu ◽  
Hiroki Sugimura ◽  
...  
Keyword(s):  
High Temperature ◽  
Microscopic Analysis ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Electron Microscopic ◽  
X Ray ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Transmission Electron Microscopic ◽  
Transmission Electron Microscopic Analysis

ABSTRACTSingle crystalline AlN epitaxial layers have been grown on and (0001) sapphire and 6H-SiC substrates by MOVPE technique at high temperatures in the range of 1340-1500°C. The structural qualities of the high temperature grown AlN layers were found to be good as evidenced by X-ray diffraction analyses results. By transmission electron microscopic analysis, dislocation densities of the layers were found to be 6.2 × 107 cm−2 or lower and the formation of dislocation loops was confirmed. High temperature bridge layers of AlN and AlxGa1−xN layers were grown on linear-groove patterned sapphire based AlN templates and 6H-SiC substrates. AlxGa1−xN bridge layers exhibited different growth behaviours depending on the direction of groove patterns on the sub-strates.

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