Bicontinuous Cubic Phase as a Matrix for the Synthesis of Semiconductor Nanocrystallites

1996 ◽  
Vol 431 ◽  
Author(s):  
Jianping Yang ◽  
Syed Qadri ◽  
Banahalli Ratna

AbstractBicontinuous cubic phase of lipid has been utilized for the first time as a matrix to synthesize II–VI (CdS) and IV–VI (PbS) semiconductor nanocrystallites. The nanoparticles were isolated from the lipid matrix and stabilized by capping with a thiol compound before purification. Two different sizes (2.3 nm and 3.0 nm) of CdS particles were prepared by varying the conditions of preparation. The size was determined by a combination of UV-vis absorption spectra and X-ray diffraction (XRD). The steep absorption edges of the two CdS samples indicate very narrow size distribution. XRD and transmission electron microscopic imaging of PbS nanocrystallites revealed that the size was 4.9 nm with nearly monodispersed size distribution.

2004 ◽  
Vol 19 (10) ◽  
pp. 2905-2912 ◽  
Author(s):  
Tokeer Ahmad ◽  
Ashok K. Ganguli

Nanoparticles of barium orthotitanate (Ba2TiO4) was obtained using microemulsions (avoiding Ba-alkoxide). Powder x-ray diffraction studies of the powder after calcining at 800 °C resulted in a mixture of orthorhombic (70%) and monoclinic (30%) phases. The high-temperature orthorhombic form present at 800 °C was due to the small size of particles obtained by the reverse micellar route. Pure orthorhombic Ba2TiO4 was obtained on further sintering at 1000 °C with lattice parameters a = 6.101(2) Å, b =22.94(1) Å, c = 10.533(2) Å (space group, P21nb). The particle size obtained from x-ray line broadening studies and transmission electron microscopic studies was found to be 40–50 nm for the powder obtained after heating at 800 °C. Sintering at 1000 °C showed increase in grain size up to 150 nm. Our studies corroborate well with the presence of a martensitic transition in Ba2TiO4. The dielectric constant was found to be 40 for Ba2TiO4 (at 100 kHz) for samples sintered at 1000 °C. The dielectric loss obtained was low (0.06) at 100 kHz.


2006 ◽  
Vol 955 ◽  
Author(s):  
Balakrishnan Krishnan ◽  
Masataka Imura ◽  
Kazuyoshi Iida ◽  
Kentaro Nagamatsu ◽  
Hiroki Sugimura ◽  
...  

ABSTRACTSingle crystalline AlN epitaxial layers have been grown on and (0001) sapphire and 6H-SiC substrates by MOVPE technique at high temperatures in the range of 1340-1500°C. The structural qualities of the high temperature grown AlN layers were found to be good as evidenced by X-ray diffraction analyses results. By transmission electron microscopic analysis, dislocation densities of the layers were found to be 6.2 × 107 cm−2 or lower and the formation of dislocation loops was confirmed. High temperature bridge layers of AlN and AlxGa1−xN layers were grown on linear-groove patterned sapphire based AlN templates and 6H-SiC substrates. AlxGa1−xN bridge layers exhibited different growth behaviours depending on the direction of groove patterns on the sub-strates.


2019 ◽  
Vol 397 ◽  
pp. 101-110
Author(s):  
Fares Serradj ◽  
Hichem Farh ◽  
Brahim Belfarhi

The precipitation of two 6xxx (Al-Mg-Si) alloys with and without copper (Cu) and excess silicon (Si) has been investigated by using the differential scanning calorimetry (DSC), transmission electron microscopic (TEM) and X ray diffraction (XRD) analysis. The analysis of the DSC curves found that the excess Si accelerate the precipitation. The values of activation energies for each peak of DSC curves were determined by using Kissinger–Akahira–Sunose (KAS) and Boswell isoconversional methods. The alloy which has an excess Si and copper require larger activation energy for precipitation despite the acceleration of the precipitation by the excess Si. TEM observation result shows there is smaller size and higher density of precipitate in excess Si alloy than those of excess-free.


Minerals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 611
Author(s):  
Celia Marcos ◽  
María de Uribe-Zorita ◽  
Pedro Álvarez-Lloret ◽  
Alaa Adawy ◽  
Patricia Fernández ◽  
...  

Chert samples from different coastal and inland outcrops in the Eastern Asturias (Spain) were mineralogically investigated for the first time for archaeological purposes. X-ray diffraction, X-ray fluorescence, transmission electron microscopy, infrared and Raman spectroscopy and total organic carbon techniques were used. The low content of moganite, since its detection by X-ray diffraction is practically imperceptible, and the crystallite size (over 1000 Å) of the quartz in these cherts would be indicative of its maturity and could potentially be used for dating chert-tools recovered from archaeological sites. Also, this information can constitute essential data to differentiate the cherts and compare them with those used in archaeological tools. However, neither composition nor crystallite size would allow distinguishing between coastal and inland chert outcrops belonging to the same geological formations.


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