Low-temperature preparation of hydrothermal lead zirconate titanate thin films

2000 ◽  
Vol 17 (4) ◽  
pp. 455-460 ◽  
Author(s):  
Kyung Won Seo ◽  
Hyun Goo Kong
2008 ◽  
Vol 23 (11) ◽  
pp. 2846-2853 ◽  
Author(s):  
X.D. Zhang ◽  
X.J. Meng ◽  
J.L. Sun ◽  
T. Lin ◽  
J.H. Ma ◽  
...  

The Pb(ZrxTi1–x)O3(PZT) films sputter deposited on LaNiO3(LNO)/Si(100) substrates were recrystallized to highly (l00)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (l00)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.


1999 ◽  
Vol 148 (3-4) ◽  
pp. 137-141 ◽  
Author(s):  
Jianming Zeng ◽  
Miao Zhang ◽  
Zhitang Song ◽  
Lianwei Wang ◽  
Jinhua Li ◽  
...  

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