The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing

2008 ◽  
Vol 23 (11) ◽  
pp. 2846-2853 ◽  
Author(s):  
X.D. Zhang ◽  
X.J. Meng ◽  
J.L. Sun ◽  
T. Lin ◽  
J.H. Ma ◽  
...  
Keyword(s):  
Low Temperature ◽  
Lead Zirconate Titanate ◽  
Perovskite Structure ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
High Oxygen Pressure ◽  
Low Temperature Preparation ◽  
Pzt Films ◽  
Sputter Deposited ◽  
Temperature Preparation

The Pb(ZrxTi1–x)O3(PZT) films sputter deposited on LaNiO3(LNO)/Si(100) substrates were recrystallized to highly (l00)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (l00)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.

Microstructure of Compositionally Graded PZT films Grown by Pulsed Laser Deposition

2008 ◽  
Vol 14 (S3) ◽  
pp. 53-56
Author(s):  
S.A.S. Rodrigues ◽  
A. Khodorov ◽  
M. Pereira ◽  
M.J.M. Gomes
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Film Growth ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Composition Gradient ◽  
Complex Structures ◽  
Pzt Films

Ferroelectric films with a composition gradient have attracted much attention because of their large polarization offset present in the hysteresis loops. Lead Zirconate Titanate (PZT) films were deposited on Pt/TiO2/SiO2/Si substrates by Pulsed Laser Deposition (PLD) technique, using a Nd:YAG laser (Surelite) with a source pulse wavelength of 1064 nm and duration of 5-7 ns delivering an energy of 320 mJ per pulse and a laser fluence energy about 20 J/cm2. The film growth is performed in O2 atmosphere (0,40 mbar) while the substrate is heated at 600°C by a quartz lamp. Starting from ceramic targets based on PZT compositions and containing 5% mol. of excess of PbO to compensate the lead evaporation during heat treatment, three films with different compositions Zr/Ti 55/45, 65/35 and 92/8, and two types of complex structures were produced. These complex structures are in the case of the up-graded structure (UpG), with PZT (92/8) at the bottom, PZT (65/35) on middle and PZT (55/45) on the top, and for down-graded (DoG) one, that order is reversed.

Stress Characterization of Sputtered PZT Films

1997 ◽  
Vol 505 ◽  
Author(s):  
M. J. Mescher ◽  
M. L. Reed ◽  
T. E. Schlesinger
Keyword(s):  
Lead Zirconate Titanate ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Film Stress ◽  
Intrinsic Stress ◽  
Composite Target ◽  
Fluorescence Measurements ◽  
Wide Range ◽  
Pzt Films ◽  
Sputter Deposited

ABSTRACTIn this work we show that stress in sputter deposited lead zirconate titanate (PZT) films can be controlled by variation of both deposition and annealing temperatures. These films were deposited via reactive rf magnetron sputtering using a Pb1.25Zr. 52Ti. 48 03 composite target and 02 as a reactive gas in an Ar ambient. Variation of stress as a function of deposition and annealing temperature was characterized. The deposited film composition was determined from x-ray fluorescence measurements. There is a strong correlation between film stress, composition, and crystallographic orientation. Stress was determined from the deflection of released SiO 2/Pt cantilever beams. We show that films with a wide range of intrinsic stress can be deposited which still exhibit good piezoelectric properties, making the fabrication of reliable thin film piezoelectric actuators possible.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

Fabrication of Piezoelectric Diaphragm Using Lead Zirconate Titanate (PZT) Films

2001 ◽  
Vol 687 ◽  
Author(s):  
E. Hong ◽  
S.V. Krishnaswamy ◽  
C.B. Freidhoff ◽  
S. Trolier-McKinstry
Keyword(s):  
Lead Zirconate Titanate ◽  
Silicon Oxide ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Element Analysis ◽  
Deep Reactive Ion Etching ◽  
Dielectric Constant And Loss ◽  
Resonance Frequencies ◽  
Pzt Films ◽  
Si Wafer

AbstractPiezoelectric diaphragms were fabricated using bulk micromachining. The diaphragms had a unimorph structure, where Pb(Zr0.52Ti0.48)O3 (PZT) and thermally grown silicon oxide (SiO2) films were used as the active and passive layers, respectively. To actuate the diaphragms, two modes were designed: d31 and d33-mode. For d31-mode diaphragms, a Si wafer with Pt/Ti/SiO2 (0.5 νm) was coated with ∼1.2 νm PZT. A Cr/Au top electrode was then evaporated. Each layer including the bottom electrode was patterned into a circular shape. To fabricate d33-mode diaphragms, a Si wafer with thermal SiO2 (0.5 νm) was coated with ∼0.3 νm ZrO2 and ∼1.6 νm of PZT. On top of these layers, a Cr/Au top electrode was deposited and patterned into a ring- shaped interdigitated transducer. Finally, both d31 and d33-mode diaphragms were released using deep reactive ion etching. Diameters of the fabricated diaphragms were in the range of 600 νm and 1000 νm. For d31-mode diaphragms, the dielectric constant and loss of the released piezoelectric layer at 1 kHz were > 800 and < 2%, respectively. The remanent polarization was ∼20 νC/cm2and the coercive field was ∼61 kV/cm. Ferroelectric measurements showed well- developed hysteresis loops for the d33-mode diaphragms. Both d31 and d33-mode diaphragms behave as membranes rather than plates. Their measured resonance frequencies were consistent with calculations from an analytic model for circular membranes and ANSYS finite element analysis.

Low-Temperature Synthesis and Dielectric Properties of Single-Phase Lead Zirconate Titanate Thin Film with a Nano Particle Seeding Technique

2003 ◽  
Vol 784 ◽  
Author(s):  
Tomokazu Tanase ◽  
Yoshio Kobayashi ◽  
Takao Miwa ◽  
Mikio Konno
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Lead Zirconate Titanate ◽  
Single Phase ◽  
Dissipation Factor ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTThe low temperature synthetic method, which combines chemical solution deposition and nm-seeding technique, was applied to the fabrication of lead zirconate titanate (PZT) thin films. Nano-crystallines of barium strontium titanate (BST) particles were prepared by the hydrolysis reaction of the complex alkoxides. PZT precursor solutions containing the BST particles were spin-coated on Pt/Ti/SiO2/Si substrates to film thickness of 500 − 800 nm at particle concentrations of 0–25.1 mol%, and annealed at various temperatures. Seeding of BST particles prevented the formation of pyrochlore phases, which appeared at temperatures above 400 °C in unseeded PZT films, and crystallized PZT into perovskite structures at 420 °C, which was more than 100 °C below the crystallization temperature of the unseeded PZT films. Measurement of dielectric properties at 1 kHz showed that the 25.1 mol% BST-seeded PZT films annealed at 450 °C had a dielectric constant as high as 300 with a dissipation factor of 0.05. Leakage current density of the film was less than 1×10-6 A/cm2 at applied electric field from 0 to 64 kV/cm.

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