Interdiffusion kinetics in the Mo5SiB2 (T2) phase

2006 ◽  
Vol 27 (6) ◽  
pp. 605-613 ◽  
Author(s):  
Sungtae Kim ◽  
John H. Perepezko



2007 ◽  
Vol 336-338 ◽  
pp. 879-882 ◽  
Author(s):  
I. Dahan ◽  
M.P. Dariel

The present communication is concerned with the interdiffusion kinetics and the interface breakdown that take place in the Nb/NbC multilayer system as the result of thermal annealing in the 400-800oC temperature range. Within this temperature range carbon is the diffusing species. Carbon diffuses from the carbide layer into the adjacent Nb layer, depleting its concentration within the carbide, causing the nucleation and subsequent growth of an intermediate Nb2C layer and decreasing the width of the original Nb layer. TEM examination of the cross-sections of the multilayer specimens provides data regarding the evolution of the microstructure and, in particular, regarding the initial nucleation stage of the newly formed Nb2C layer.



2014 ◽  
Vol 610 ◽  
pp. 173-179 ◽  
Author(s):  
Jingjing Le ◽  
Lei Liu ◽  
Fan Liu ◽  
Yida Deng ◽  
Cheng Zhong ◽  
...  


2020 ◽  
Vol 51 (4) ◽  
pp. 1799-1807
Author(s):  
Ruidi Li ◽  
Pengda Niu ◽  
Shenghua Deng ◽  
Linjun Tang ◽  
Siyao Xie ◽  
...  


Langmuir ◽  
2013 ◽  
Vol 29 (36) ◽  
pp. 11317-11321 ◽  
Author(s):  
Katja Pohl ◽  
Jörg Adams ◽  
Diethelm Johannsmann


1987 ◽  
Vol 104 ◽  
Author(s):  
P. M. Petroff

ABSTRACTThis paper reviews the principal processes involved in the enhanced interdiffusion of elements across interfaces between two III-V compound semiconductors. Implantation enhanced interdiffusion effects in GaAs-Gal−xAlxAs are compared for single Quantum Well structures and Superlattice structures. Measurements indicate a marked difference in the annealing and enhanced interdiffusion kinetics between these 2 types of structures.



1991 ◽  
Vol 232 ◽  
Author(s):  
I. Hashim ◽  
H. A. Atwater ◽  
K. T. Y. Kung ◽  
R. M. Valletta

ABSTRACTThe interdiffusion kinetics of ultrahigh vacuum deposited Ta/Ni81Fe19 short-period multilayers films have been investigated, and changes in microstructure were related to magnetic properties. Small angle X-ray diffraction and transmission electron microscopy were used to study layer morphology evolution and interdiffusion during post-growth isothermal annealing in the temperature range 300 – 600°C. The kinetic analysis suggests that interface roughening due to grain growth, and grain-boundary mediated diffusion of Ta occurs concurrently at early anneal times in the Ni81Fe19 films. Subsequent grainboundary and lattice diffusion of Ta lead to a reduction of magnetization and increase in coercivity of Ni81Fe19.





Author(s):  
Shenghua Deng ◽  
Tiechui Yuan ◽  
Ruidi Li ◽  
Mei Zhang ◽  
Siyao Xie ◽  
...  


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