On the analyticity of the complex dielectric function in the unit disk

1981 ◽  
Vol 31 (15) ◽  
pp. 513-516 ◽  
Author(s):  
K. E. Peiponen
Micron ◽  
2021 ◽  
pp. 103124
Author(s):  
G. Herrera-Perez ◽  
C. Ornelas-Gutierrez ◽  
A. Reyes-Montero ◽  
F. Paraguay-Delgado ◽  
A. Reyes-Rojas ◽  
...  

1988 ◽  
Vol 100 ◽  
Author(s):  
P. M. Fauchet ◽  
K. D. Li

ABSTRACTThe complex dielectric function of molten silicon produced after picosecond illumination is found to be well described by a Drude model from 1.1 eV to 3.5 eV. Close to the melting temperature, we obtain ωp = 2.50 1016rad/s and τ = 212 10−18s. Transiently, the liquid temperature can exceed the melting temperature or even the boiling temperature Tb. We observe this transient heating and model it with a relatively simple computer code which includes superheating of the liquid above Tb. These measurements are possible thanks to a novel pump and probe technique.


2016 ◽  
Vol 49 (7) ◽  
pp. 075302 ◽  
Author(s):  
David Muñetón Arboleda ◽  
Jesica M J Santillán ◽  
Luis J Mendoza Herrera ◽  
Diego Muraca ◽  
Daniel C Schinca ◽  
...  

2001 ◽  
Vol 677 ◽  
Author(s):  
Y. Chan ◽  
Aleksandra B. Djurišić ◽  
E. Herbert Li

ABSTRACTIn this work we propose an analytical expression for the complex dielectric function that includes both discrete and continuum exciton effects. The model is based on the work of Elliott and the proposed model has been applied to modeling the experimental data for the hexagonal GaN. We have obtained good agreement with the experimental data. The model assumes Lorentzian broadening in order to obtain dielectric function equations in analytically closed form. We show that Lorentzian broadened dielectric function decays more slowly than the experimental data for hexagonal GaN at the low energy side. This indicates that the broadening of the absorption edge in GaN is not purely Lorentzian. The agreement with the experimental data can be improved using adjustable broadening modification.


1982 ◽  
Vol 114 (2) ◽  
pp. 537-544 ◽  
Author(s):  
A. Kreissl ◽  
K. Bohnert ◽  
V. G. Lyssenko ◽  
C. Klingshirn

2020 ◽  
Vol 813 ◽  
pp. 152136 ◽  
Author(s):  
João E.F.S. Rodrigues ◽  
Mateus M. Ferrer ◽  
Mario L. Moreira ◽  
Julio R. Sambrano ◽  
Renilton C. Costa ◽  
...  

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