Infrared Complex Dielectric Function Analysis for Chemical Bonding Structure of Porous Silica Low Dielectric Constant Films

2005 ◽  
Author(s):  
Syozo Takada ◽  
Nobuhiro Hata ◽  
Shingo Hishiya ◽  
Nobutoshi Fujii ◽  
Takahiro Nakayama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Function ◽  
Chemical Bonding ◽  
Function Analysis ◽  
Porous Silica ◽  
Low Dielectric Constant ◽  
Complex Dielectric Function ◽  
Bonding Structure ◽  
Low Dielectric

Measurement of the dielectric function spectra of low dielectric constant using the spectroscopic ellipsometry

2003 ◽  
Author(s):  
Masahiro Horie ◽  
Kamil Postava ◽  
Tomuo Yamaguchi ◽  
Kumiko Akashika ◽  
Hideki Hayashi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Low Dielectric Constant ◽  
Low Dielectric

scholarly journals The roles of hydrophobic group on the surface of ultra low dielectric constant porous silica film during thermal treatment

2007 ◽  
Vol 515 (18) ◽  
pp. 7275-7280 ◽  
Author(s):  
Jen-Tsung Luo ◽  
Wen-Fa Wu ◽  
Hua-Chiang Wen ◽  
Ben-Zu Wan ◽  
Yu-Ming Chang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Thermal Treatment ◽  
Porous Silica ◽  
Silica Film ◽  
Low Dielectric Constant ◽  
Hydrophobic Group ◽  
Low Dielectric ◽  
Porous Silica Film

Ultra Low-dielectric-constant Materials for 65nm Technology Node and Beyond

2004 ◽  
Vol 812 ◽  
Author(s):  
Hao Cui ◽  
Darren Moore ◽  
Richard Carter ◽  
Masaichi Eda ◽  
Peter Burke ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Plasma Damage ◽  
Pore Characteristics ◽  
Hydrogenated Silicon ◽  
Bonding Structure ◽  
Low Dielectric ◽  
Etch Stop ◽  
Low Dielectric Constant Materials

AbstractPore characteristics including pore size distribution, porosity, and pore interconnectivity of PECVD SiCOH inter- layer dielectric (ILD) materials with different dielectric constant (κ) values have been studied. Oxygen plasma damage to SiCOH low-κ films increases dramatically as the κ value decreases. Simulations showed that, compared to the ILD film, the overhead dielectric films have a significant impact on the overall effective κ (κeff) of the BEOL interconnects. Reducing the κ values of these overhead films helps to alleviate the pressure on the κ value requirement of the ILD materials while still meeting the κeff target. Ultra low-κ (ULK) PECVD hydrogenated silicon carbide (H:SiC) films with a κ of 3.0 have been studied for the etch-stop applications. Studies of the chemical composition and bonding structure suggest that less Si-C networκs are formed and more micro-porosity are incorporated in the ULK H:SiC film. The leakage current of the ULK H:SiC film is found to be about 5 times lower than the H:S iC and H:SiCN films with higher κ values. The etch rate of ULK H:SiC film using a standard SiCOH ILD etch chemistry has been found to be negligible. Such an extremely high etch selectivity maκes these films very good etch-stop layers.

Thermal stability of low dielectric constant porous silica films

2005 ◽  
Vol 87 (26) ◽  
pp. 262909 ◽  
Author(s):  
L. Esposito ◽  
G. Ottaviani ◽  
E. Carollo ◽  
M. Bacchetta
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Porous Silica ◽  
Low Dielectric Constant ◽  
Silica Films ◽  
Low Dielectric ◽  
Thermal Stability Of

First Pass Study of Surface Modified Porous Low-k by Ion Implantation for Zero Thickness Barrier Requirement of Cu/MSQ/Si Stacks in Copper Metallization Scheme

2005 ◽  
Vol 863 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
Zubin P. Patel ◽  
H. Bakhru
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Ion Implantation ◽  
Porous Silica ◽  
Surface Hardness ◽  
Low Dielectric Constant ◽  
Copper Metallization ◽  
Porous Films ◽  
Critical Dimensions ◽  
Low Dielectric

AbstractLow-κ dielectrics have to meet stringent requirements in material properties in order to be successfully integrated. A particularly difficult challenge for material development is to obtain a combination of low dielectric constant with good thermal and mechanical properties. Incorporation of low dielectric constant materials such as porous silica based materials as a replacement to conventional dielectrics like SiO2 and use of Cu metallization schemes has become a necessity as critical dimensions of devices decrease. This paper is focused on the challenges in developing materials with low dielectric constant but strong thermo mechanical properties. Thin films of Ultra-Low materials such as porous Methyl Silsesquioxane (MSQ) (κ=2.2) were implanted with argon 1 × 1016 cm-2 dose at energies varying from 20 to 50 keV at room temperature. This work shows that the surface hardness of the porous films can be improved five times as compared to the as-deposited porous films by implanting Ar with 1 × 1016 cm-2 doses at 20 keV, sacrificing only a slight increase (∼9%) in dielectric constant (e.g., from 2.2 to 2.4). The hardness persists after 4500C annealing. In this current work, an ion implantation strategy was pursued to create a SiO2-like surface on MSQ. The effects of implantation parameters on the barrier property and bulk stability of MSQ were then studied. The results reveal one possible route to attain the “zero barrier thickness” requirement for interconnects systems.

Skeletal silica characterization in porous-silica low-dielectric-constant films by infrared spectroscopic ellipsometry

2005 ◽  
Vol 97 (11) ◽  
pp. 113504 ◽  
Author(s):  
Syozo Takada ◽  
Nobuhiro Hata ◽  
Yutaka Seino ◽  
Nobutoshi Fujii ◽  
Takamaro Kikkawa
Keyword(s):  
Dielectric Constant ◽  
Spectroscopic Ellipsometry ◽  
Porous Silica ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Infrared Spectroscopic
Sign in / Sign up

Export Citation Format

Share Document