Double crystal X-ray diffraction study of MBE self-organized InAs quantum dots

1998 ◽  
Vol 41 (2) ◽  
pp. 172-176 ◽  
Author(s):  
Yutian Wang ◽  
Yan Zhuang ◽  
Wenquan Ma ◽  
Wei Wang ◽  
Xiaoping Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Diffraction Study ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Self Organized

X-ray diffraction analysis of self-organized InAs quantum dots

1996 ◽  
Author(s):  
Yan Zhuang ◽  
Y.T. Wang ◽  
W.Q. Ma ◽  
W. Wang ◽  
X.P Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Diffraction Analysis ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Title X ◽  
Self Organized

Double-Crystal x-Ray Diffraction Study on Ta/Al Multilayers

1992 ◽  
Vol 9 (11) ◽  
pp. 605-608
Author(s):  
Xiu Lisong ◽  
Yuan Xiangyang ◽  
Wu Ziqin ◽  
Jiang Shusheng ◽  
Hu An ◽  
...  
Keyword(s):  
Diffraction Study ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray

Emission and X ray diffraction in AlGaAs/ InGaAs Quantum wells with embedded InAs Quantum dots

2013 ◽  
Vol 1617 ◽  
pp. 43-48
Author(s):  
R. Cisneros Tamayo ◽  
I.J. Gerrero Moreno ◽  
A. Vivas Hernandez ◽  
J.L. Casas Espinola ◽  
L. Shcherbyna
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Peak Position ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Prepared State ◽  
Temperature Dependences

ABSTRACTThe photoluminescence (PL), its temperature dependence and X-ray diffraction (XRD) have been studied in MBE grown GaAs/AlGaAs/InGaAs/AlGaAs /GaAs quantum wells (QWs) with InAs quantum dots embedded in the center of InGaAs layer in the freshly prepared states and after the thermal treatments during 2 hours at 640 or 710 °C. The structures contained two buffer (Al0.3Ga0.7As/In0.15Ga0.85As) and two capping (In0.15Ga0.85As / Al0.3Ga0.7As) layers. The temperature dependences of PL peak positions have been analyzed in the temperature range 10-500K with the aim to investigate the QD composition and its variation at thermal annealing. The experimental parameters of the temperature variation of PL peak position in the InAs QDs have been compared with the known one for the bulk InAs crystals and the QD composition variation due to Ga/Al/In inter diffusion at thermal treatments has been detected. XRD have been studied with the aim to estimate the capping/buffer layer compositions in the different QW layers in freshly prepared state and after the thermal annealing. The obtained emission and XRD data and their dependences on the thermal treatment have been analyzed and discussed.

Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction

1997 ◽  
Vol 70 (8) ◽  
pp. 955-957 ◽  
Author(s):  
A. A. Darhuber ◽  
V. Holy ◽  
J. Stangl ◽  
G. Bauer ◽  
A. Krost ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Organized

InAs Quantum Dots Grown on an AlGaAsSb Strain-Relief Buffer

2000 ◽  
Vol 642 ◽  
Author(s):  
A.L. Gray ◽  
L. R. Dawson ◽  
Y. Lin ◽  
A. Stintz ◽  
Y.-C. Xin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Cross Section ◽  
Gaas Substrate ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Strain Relief ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Transmission Electron

ABSTRACTAn In(Ga)As-based self-assembled quantum dot laser test structure grown on strain-relief Al0.5Ga0.5As1-ySby strain-relief buffer layers (0≤y ≤ 0.24) on a GaAs substrate is investigated in an effort to increase dot size and therefore extend the emission wavelength over conventional InAs quantum dots on GaAs platforms. Cross-section transmission electron microscopy, and high-resolution x-ray diffraction are used to monitor the dislocation filtering process and morphology in the buffer layers. Results show that the buffer layers act as an efficient dislocation filter by drastically reducing threading dislocations, thus providing a relaxed, low dislocation, compositionally modulated Al0.5Ga0.5Sb0.24As0.76 substrate for large (500Å height x 300Å width) defect -free InAs quantum dots. Photoluminescence shows a ground-state emission of the InAs quantum dots at 1.45 μm.

X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots

1999 ◽  
Vol 33 (11) ◽  
pp. 1229-1237 ◽  
Author(s):  
N. N. Faleev ◽  
A. Yu. Egorov ◽  
A. E. Zhukov ◽  
A. R. Kovsh ◽  
S. S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Diffraction Analysis ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray

High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4084-4087 ◽  
Author(s):  
Anton A. Darhuber ◽  
Vaclav Holy ◽  
Julian Stangl ◽  
Günther Bauer ◽  
Alois Krost ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Organized ◽  
Lateral Ordering

Double Crystal Synchrotron X-Ray Diffraction Study of Stoichiometry in Gallium Arsenide

1988 ◽  
Vol 138 ◽  
Author(s):  
S. Cockerton ◽  
G.S. Green ◽  
B.K. Tanner
Keyword(s):  
Gallium Arsenide ◽  
Diffraction Study ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray

Optical And Structural properties of Vertical Aligned Self-Assembled InAs Quantum Dots Multilayers

2001 ◽  
Vol 676 ◽  
Author(s):  
J. C. González ◽  
M. I. N. da Silva ◽  
W. N. Rodrigues ◽  
F. M. Matinaga ◽  
R. Magalhaes-Paniago ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTIn this work, we report optical and structural properties of vertical aligned self-assembled InAs quantum dots multilayers. The InAs quantum dots samples were grown by Molecular Beam Epitaxy. Employing Atomic Force Microscopy, Transmission Electron Microscopy, and Gracing Incident X-ray Diffraction we have studied the structural properties of samples with different number of periods of the multiplayer structure, as well as different InAs coverage. The optical properties were studied using Photoluminescence spectroscopy.

Sign in / Sign up

Export Citation Format

Share Document