Material removal mechanism of PTMCs in high-speed grinding when considering consecutive action of two abrasive grains

2018 ◽  
Vol 100 (1-4) ◽  
pp. 153-165 ◽  
Author(s):  
Huan Zhou ◽  
Wenfeng Ding ◽  
Chaojie Liu
2020 ◽  
Vol 1009 ◽  
pp. 123-128
Author(s):  
Sweety Satpathy ◽  
Amitava Ghosh

Feasibility of utilizing cryogenic technology to improve the shearability of Al2024-T351 alloy is experimentally investigated by carrying out a single grit scratch-grinding test. A single grit brazed diamond grinding tool is developed for the study. Al2024-T351 work specimens are treated with liquid nitrogen for 6 hours before the scratch test. Although there was no significant change in the tensile strength of the material, the surface experiences change in the microhardness. It helps in arresting the side flow and ploughing of the material during high speed scratch grinding. The scratched grooves on cryo-treated samples, compare to those of untreated specimens, shows signs of cleaner shear-cuts, superior finish and produces less grinding force during grinding


2011 ◽  
Vol 188 ◽  
pp. 330-335
Author(s):  
Bo Zhao ◽  
C.Y. Zhao ◽  
G.F. Gao

In this paper, on the influence of different dressing methods, such as elliptical ultrasonic vibration, on the grinding wheel bonded delta, the morphology of abrasive grains of wheel, the protrusion height and the grinding wheel topography was studied by experiment. The experiment shows that the abrasive grains of grinding wheel surface dressed by elliptical ultrasonic vibration are great in protrusion height and trench depth, and the bonded delta grain after grinding is narrow, short, and irregular with significant reduced semi-surrounded area compared with by ordinary dressing method. The abrasive grains of metal-bonded diamond grinding wheel surface dressed by elliptical ultrasonic vibration are basically intact, and due to the high-speed collision between abrasive grains, local micro-break is easy to occur on the abrasive grains to form multiple micro-cutting edges. The abrasive grains of grinding wheel surface dressed by ordinary dressing method are fractured and broken, while that of resin-bonded grinding wheel surface have a high ratio to be loose and shedding. For the metal or resin-bonded grinding wheel surface dressed by elliptical ultrasonic vibration, its material removal mechanism may primarily be the removal of bonding ductility and the fine-crushing of abrasive grains; for the metal-bonded grinding wheel surface dressed by ordinary method, its material removal mechanism may primarily be the fracture and break of abrasive grains, secondly be the fracture of bonding agent; and for the resin-bonded grinding wheel surface, its material removal mechanism may mainly be the looseness and shedding of abrasive grains caused by the fracture of bonding agent, secondly be the fracture of abrasive grains. Compared with ordinary dressing method, elliptical ultrasonic vibration dressed abrasive grains are dense at shaft and sparse in periphery, with a large quantity of static effective abrasive grains, great protrusion height and an excellent nature of contour.


2010 ◽  
Vol 2010.8 (0) ◽  
pp. 197-198
Author(s):  
Chihiro NISHIKAWA ◽  
Yuki KIHARA ◽  
Koichi MIZUTANI ◽  
Tianfeng ZHOU ◽  
Jiwang YAN ◽  
...  

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.


2021 ◽  
pp. 103773
Author(s):  
Ruiwen Geng ◽  
Xiaojing Yang ◽  
Qiming Xie ◽  
Jianguo Xiao ◽  
Wanqing Zhang ◽  
...  

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