Characterization of nanostructured CuO–porous silicon matrix formed on copper-coated silicon substrate via electrochemical etching

2013 ◽  
Vol 115 (4) ◽  
pp. 1345-1353 ◽  
Author(s):  
M. Naddaf ◽  
O. Mrad ◽  
A. Al-zier
Keyword(s):  
Porous Silicon ◽  
Silicon Substrate ◽  
Electrochemical Etching ◽  
Silicon Matrix

scholarly journals Fabrication and Characterization of Porous Silicon Layer Prepared by Photo-Electrochemical Etching in CH3OH:HF Solution

2013 ◽  
Vol 8 ◽  
pp. 29-36 ◽  
Author(s):  
Hasan A. Hadi ◽  
Raid A. Ismail ◽  
Nadir F. Habubi
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Gravimetric Method ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Constant Current ◽  
Theoretical Relation ◽  
Fabrication And Characterization ◽  
A Current

Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20 mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten point height was 317 nm. The average of pores diameter was 419.98nm, and the grain growth is columnar with a (211) preferred orientation. The grain size of the PS was estimated from the Scherer’s formula and found to be 73 nm. All the properties of the porous silicon layer, such as porosity and the thickness depend on the anodization parameters. The porosity (P) was approximately 77%. The thickness of the layer formed during an anodization in constant current was 3.54 nm in gravimetric method, while its value was 1.77 nm by using the theoretical relation.

Fabrication of Macroporous on No-Mask Silicon Substrate for Application to Microsystems

2008 ◽  
Author(s):  
Gyoko Nagayama ◽  
Ryuji Ando ◽  
Kei Muramatsu ◽  
Takaharu Tsuruta
Keyword(s):  
Fuel Cell ◽  
Porous Silicon ◽  
Pore Size ◽  
Silicon Wafer ◽  
Silicon Substrate ◽  
Electrochemical Etching ◽  
Cell System ◽  
Back Side ◽  
Ambient Conditions ◽  
Anodic Etching

We applied the anodic etching (i. e. photo assisted electrochemical etching) to the n type silicon substrate of orientation (100) without masking to fabricate macropores penetrated Si substrate. The anodic etching conditions of the macroporous formation were discussed and the effects of the resistivity, voltage, current density, electrolyte concentration and illumination etc. on the pore size and the porosity were investigated. The pores in high aspect ratio through the cross section of the silicon wafer were obtained with polishing and RIE (reactive ion etching) from the back side. It is found that the pore size at the back side is about 1.5 to 2 times larger than that of the front side. Also, as one example of the applications of porous silicon to microsystems, we demonstrate the results obtained in a micro fuel cell system using a porous silicon membrane (PSM). The PSM was fabricated by a porous silicon wafer which was filled with Nafion dispersion solution with ultrasonic vibrations. It was used as a proton conduction membrane by assembling into the H2 / air feed fuel cell at ambient conditions using conventional electrodes. We found that the Nafion filled PSM worked well and a maximum power density of 89.2 mW/cm2 were achieved under the flow rate of 100ml/min for H2 and 200ml/min for air.

scholarly journals Photothermal Characterization of Electrochemical Etching Processed n-Type Porous Silicon

1997 ◽  
Vol 79 (25) ◽  
pp. 5022-5025 ◽  
Author(s):  
A. Calderón ◽  
J. J. Alvarado-Gil ◽  
Yu. G. Gurevich ◽  
A. Cruz-Orea ◽  
I. Delgadillo ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching

scholarly journals Study of Composite Structures Based on a Porous Silicon Matrix and Nanoparticles Ag/Zno Used as Non-Invasive Highly Sensitive Biosensor Devices

2021 ◽  
Author(s):  
Veniamin Koshevoi ◽  
Anton Belorus ◽  
Ilya Pleshanov ◽  
Anton Timchenko ◽  
Roman Denisenko ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Emission Spectroscopy ◽  
Composite Structures ◽  
Electrochemical Etching ◽  
Silicon Matrix ◽  
Non Invasive ◽  
Highly Sensitive ◽  
Porous Matrices ◽  
Scanning Electron

In this work composite structures based on a porous silicon were obtained and studied. Porous matrices were formed by electrochemical etching in aqueous solutions of hydrofluoric acid. Based on the obtained substrates, por-silicon (Si)/silver (Ag) and por-Si/zinc oxide (ZnO) composite structures were formed. These composites were functionalized by various methods (electro (E)-, thermo (T)-, electrothermal exposure) as a result of which the structures were modified. When studying the samples by scanning electron microscopy (SEM), it was concluded that silver nanoparticles actively diffused into the pores under these technological modes of functionalization. The por-Si/Ag and por-Si/ZnO composite structures were also studied using the following methods: infrared (IR) spectroscopy and Raman ultrasoft X-ray emission spectroscopy. Also, the photoluminescent characteristics of the samples were studied. Based on the obtained results, it was concluded that functionalization methods actively change the phase composition of structures and the optical properties of composites.

3-Mercaptopropionic Acid modified Porous Silicon Substrate used in Hyperammonemia

2007 ◽  
Vol 1063 ◽  
Author(s):  
Dong-hwa Yun ◽  
Jun-Hyoung Chang ◽  
Woo-Jin Lee ◽  
Suk-In Hong
Keyword(s):  
Porous Silicon ◽  
Silicon Substrate ◽  
Mechanical Stability ◽  
Electrochemical Etching ◽  
Covalent Binding ◽  
Self Assembled Monolayer ◽  
Long Time ◽  
Porous Silicon Substrate ◽  
Membrane Adhesion ◽  
Low Sensitivity

ABSTRACTAmperometric urea sensor is more suitable than optical and potentiometric urea sensor to diagnose hyperammonemia. However, because sensitivity in low concentration decreases remarkably, despite amperometric urea sensor has been studied for a long time it has not been applied for clinical diagnosis. In this paper, a new structure for an amperometric urea sensor was fabricated by MEMS, electrochemical etching, and electrostatic covalent binding techniques. Until now most amperometric urea sensors have had a membrane fixed on top of the transducer. That method often leads to malfunction of the sensor, arising from problems such as inadequate membrane adhesion, insufficient mechanical stability, and low sensitivity. To solve these kinds of problems, urease (Urs) was immobilized by electrostatic covalent binding method on the porous silicon (PSi) substrate coated self-assembled monolayer (SAM). Electrostatic covalent binding method was used to keep anisotropic orientation of urease on SAM.

scholarly journals In Situ Growth of ZnO inside a Porous Silicon Matrix Obtained by Electrochemical Etching with a Hydrofluoric Acid-Formaldehyde Solution

2019 ◽  
Vol 2019 ◽  
pp. 1-7 ◽  
Author(s):  
R. Juárez-Nahuatlato ◽  
G. García ◽  
M. Pacio ◽  
Roberto Portillo ◽  
N. Perez-Amaro ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Electrochemical Etching ◽  
Nitrogen Adsorption ◽  
Ultraviolet Region ◽  
Ultraviolet Emission ◽  
Silicon Matrix ◽  
Electrolytic Process ◽  
Band Emission ◽  
Before And After

We present zinc oxide (ZnO) particles obtained inside a porous silicon matrix in the same electrolytic process using a p-type silicon wafer in a hydrofluoric acid (HF) solution containing formaldehyde (CH2O) and hydrated zinc sulfate as additives. The X-ray diffraction pattern of the sample confirmed the presence of ZnO with a hexagonal-type wurtzite structure. Photoluminescence (PL) spectra of the samples, before and after the functionalization process, were measured to observe the effect of ZnO inside the porous silicon. The PL measurements of porous silicon functionalized with ZnO (ZnO/PS) revealed infrared, red, blue, and ultraviolet emission bands. The ultraviolet region corresponds to the band-band emission of ZnO, and the visible emission is attributed to defects. The results of the nitrogen adsorption/desorption isotherms of the PS and ZnO/PS samples revealed larger BET surface areas and pore diameters for the ZnO/PS sample. We conclude that ZnO/PS can be obtained in a one-step electrolytic process. These types of samples can be used in gas sensors and photocatalysis.

Photoluminescent coupled multiple microcavity structures made of porous silicon

2004 ◽  
Vol 832 ◽  
Author(s):  
V. Agarwal ◽  
J.A. Soto Urueta ◽  
J. Miguel Gracia
Keyword(s):  
Porous Silicon ◽  
Structure Formation ◽  
Layered Structure ◽  
Silicon Substrate ◽  
Photonic Bandgap ◽  
Experimental Characterization ◽  
Free Standing ◽  
Photonic Bandgap Structures ◽  
Silicon Lasers

ABSTRACTIn this paper we report the fabrication and experimental characterization of photoluminescent coupled multiple microcavity 1-Dimensional photonic bandgap structures for specific photonic applications. These structures have been prepared on silicon substrate as well as free standing. The comparision with theory gave a good fit showing desired structure formation for more than 184 layered structure. These structures can be useful for a large variety of applications such as silicon lasers.

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