Zn1−xAlxO:Cu2O transparent metal oxide composite thin films by sol gel method

2017 ◽  
Vol 123 (5) ◽  
Author(s):  
M. S. AlHammad
2015 ◽  
Vol 76 (2) ◽  
pp. 378-385 ◽  
Author(s):  
Bilal Arif ◽  
H. M. El-Nasser ◽  
A. Dere ◽  
Ahmed A. Al-Ghamdi ◽  
S. Bin-Omran ◽  
...  

2011 ◽  
Vol 299-300 ◽  
pp. 558-561 ◽  
Author(s):  
Yan Jun Zhou ◽  
Fang He ◽  
Jin Gang Qi ◽  
Yu Lin Wang

By using the sol-gel method, TiO2 thin films and Ge doped TiO2 composite thin films were fabricated onto quartz substrates. XRD, XPS and UV-vis were used to characterize the phase structure, the atomic chemical states and optical absorption of these composite TiO2 thin films. XRD results indicate that diffraction peak of anatase is observed in samples. XPS result reveals that there is Ge crystal in Ge doped films which were prepared by sol-gel method, and Ge exists as elemental Ge and GeO2 in the films. The composite TiO2 thin films by sol-gel method exhibits the absorption shift to visible region due to Ge doped TiO2 thin films.


2013 ◽  
Vol 3 (4) ◽  
pp. 301-309
Author(s):  
Xiudi Xiao ◽  
Yuzhi Zhang ◽  
Zhanmin Su ◽  
Yougen Yu ◽  
Lei Miao ◽  
...  

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2682-2686 ◽  
Author(s):  
H. JIANG ◽  
H. W. LIU ◽  
H. YU ◽  
F. GAO ◽  
J.-M. LIU ◽  
...  

The dielectric property of ZnFe2O4 – SiO2 composite thin films deposited on Pt - Ti -SiO2- Si substrates, prepared by sol-gel method, are investigated. It is observed that the thin films consist of ZnFe2O4 nanoparticles embedded in the matrix of SiO2. Such a composite structure exhibits a significantly enhanced dielectric constant with respect to SiO2 thin films without too large dielectric loss enhancement.


2017 ◽  
Vol 31 (3) ◽  
pp. 299-307 ◽  
Author(s):  
William Raja Victor ◽  
Marikani Arumugam ◽  
Thiruramanathan Pandirengan ◽  
Madhavan Durairaj ◽  
Raghavendra Reddy Varimalla

1999 ◽  
Vol 14 (1) ◽  
pp. 5-7 ◽  
Author(s):  
Takuya Hori ◽  
Noriyuki Kuramoto ◽  
Hideyuki Tagaya ◽  
Masa Karasu ◽  
Jun-ichi Kadokawa ◽  
...  

Conducting thin films were prepared by entrapping water-suspended polyaniline into a silica matrix by a sol-gel route. Without metal oxide, the conductivity of the film decreased after heat treatment. However, in the presence of metal oxides such as TiO2 and Al2O3, the conductivity increased after heat treatment at 85 °C and reached 17 Scm−1 The conductivity of the film depended on the kinds and amounts of metal oxides and the temperature of heat treatment.


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