Temperature and frequency dependence of dielectric relaxation and AC electrical conductivity in p-Si/CuPc hybrid photodiode

2018 ◽  
Vol 124 (9) ◽  
Author(s):  
M. M. Shehata ◽  
K. Abdelhady
Keyword(s):  
Electrical Conductivity ◽  
Dielectric Relaxation ◽  
Frequency Dependence ◽  
Ac Electrical Conductivity

scholarly journals Электропроводность FeGaInSe-=SUB=-4-=/SUB=- на переменном токе

2020 ◽  
Vol 54 (6) ◽  
pp. 523
Author(s):  
Н.Н. Нифтиев ◽  
Ф.М. Мамедов ◽  
М.Б. Мурадов
Keyword(s):  
Electrical Conductivity ◽  
Frequency Dependence ◽  
Activation Energies ◽  
Frequency Interval ◽  
Ac Electrical Conductivity ◽  
Temperature Dependences

The results of studying frequency and temperature dependences of AC electrical conductivity in FeGaInSe4 crystals are presented. It was found in the frequency interval f = 5 • 104−106 Hz, the regularity σ ∝ fS (0.1 ≤ s ≤ 1.0) holds for electrical conductivity. From the temperuture dependences the activation energies were determined. It is shown that in the FeGaInSe4 crystal, the frequency dependence of electrical conductivity can be explained using the multiplet model, which means that the conductivity in these crystals is characterized by a band-hop mechanism.

scholarly journals Investigation of dielectric properties of heterostructures based on ZnO structures

2018 ◽  
Vol 35 (4) ◽  
pp. 885-892
Author(s):  
A.H. Selçuk ◽  
E. Orhan ◽  
S. Bilge Ocak ◽  
A.B. Selçuk ◽  
U. Gökmen
Keyword(s):  
Electrical Conductivity ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Frequency Dependence ◽  
Loss Tangent ◽  
Electrical Modulus ◽  
Ac Electrical Conductivity

Abstract The voltage and frequency dependence of dielectric constant є′, dielectric loss є″, electrical modulus M″, M′, loss tangent tanδ and AC electrical conductivity σAC of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and p-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100kHz, 500 kHz and 1 MHz in this work. While the values of є′, є″, tanδ and σAC decreased, the values of M′ and M″ increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p-Si/ZnO/Al and p-Si/PMMA/Al.

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