Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes

2015 ◽  
Vol 628 ◽  
pp. 442-449 ◽  
Author(s):  
Yasemin Şafak-Asar ◽  
Tarık Asar ◽  
Şemsettin Altındal ◽  
Süleyman Özçelik
2013 ◽  
Vol 103 (19) ◽  
pp. 193106 ◽  
Author(s):  
Chanyoung Yim ◽  
Niall McEvoy ◽  
Georg S. Duesberg

2013 ◽  
Vol 200 ◽  
pp. 193-198 ◽  
Author(s):  
Aleksandr V. Yatsenko ◽  
A.S. Pritulenko ◽  
S.V. Yevdokimov ◽  
Dmytro Yu. Sugak ◽  
I.M. Solskii

The low-frequency impedance spectroscopy method has been used to investigate the electrical conductivity peculiarities of lithium niobate (LN) crystals reduced in hydrogen. It has been found that the activation energy value of the dark electrical conductivity of such crystals in a temperature range of 288...370 К is equal to 0.68±0.02 eV. It has been demonstrated that the multiple heating of «black» LN crystals up to a temperature of about 420 K results in surface layers with modified electrical properties to occur in the crystal’s polar faces. The electrical conductivity mechanism of LiNbO3 crystals reduced in the hydrogen-containing atmosphere, and the causes of the instability of these properties are discussed.


2015 ◽  
Vol 29 (13) ◽  
pp. 1550075 ◽  
Author(s):  
İbrahim Yücedağ ◽  
Gülçin Ersöz ◽  
Ahmet Gümüş ◽  
Şemsettin Altındal

Au/PPy/n-Si Schottky barrier diodes (SBDs) were fabricated by forming polypyrrole (PPy) organic layer on n-Si using the spin coating technique. Frequency-dependent dielectric constant (ε′), dielectric loss (ε″), loss tangent ( tan δ), real and imaginary parts of electrical modulus (M′ and M″) and AC electrical conductivity (σ ac ) parameters of the structure were investigated in the frequency range of 10–500 kHz. It was found that the values of the ε′, ε″ and tan δ, in general, decrease with increasing frequency while an increase is observed in σ ac , M′ and M″. The tan δ and M″ also exhibit a peak at about zero-bias voltage, while peak intensity weakens with increasing frequency. The values of ε′ and M′ decrease with increasing voltage while an increase is observed in ε″, tan δ, σ ac and M″. These changes in ε′, ε″, tan δ, M′, M″ and σ ac values was attributed to surface charge polarization and the particular density distribution of surface states localized at PPy/n-Si interface.


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