Improving the electrical performance of PDI8-CN2 bottom-gate coplanar organic thin-film transistors

2018 ◽  
Vol 124 (10) ◽  
Author(s):  
Loredana Parlato ◽  
Ettore Sarnelli ◽  
Antonio Cassinese ◽  
Federico Chianese ◽  
Fabio Chiarella ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Organic Thin Film ◽  
Bottom Gate

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Enhanced solvent resistance and electrical performance of electrohydrodynamic jet printed PEDOT:PSS composite patterns: effects of hardeners on the performance of organic thin-film transistors

2019 ◽  
Vol 21 (46) ◽  
pp. 25690-25699 ◽  
Author(s):  
Xiaowu Tang ◽  
Hyeok-jin Kwon ◽  
Heqing Ye ◽  
Jae Young Kim ◽  
Jaewoong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Physical Properties ◽  
Thin Film Transistors ◽  
Electronic Devices ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Organic Thin Film ◽  
Organic Electronic Devices ◽  
Solvent Resistance ◽  
Organic Electronic

The addition of hardeners to the PEDOT:PSS composites enhances both electrical and physical properties to satisfy the requirements for electrode usages in organic electronic devices.

Humidity effect on electrical performance of organic thin-film transistors

2005 ◽  
Vol 86 (4) ◽  
pp. 042105 ◽  
Author(s):  
Dawen Li ◽  
Evert-Jan Borkent ◽  
Robert Nortrup ◽  
Hyunsik Moon ◽  
Howard Katz ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Organic Thin Film ◽  
Humidity Effect

Pentacene Organic Thin-Film Transistors with Dual-Gate Structure

2007 ◽  
Vol 124-126 ◽  
pp. 383-386
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Chan Hoe Ku ◽  
Sang Chul Lim ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrostatic Potential ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Gate Structure ◽  
Dual Gate ◽  
Bottom Gate

We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.

scholarly journals Metal phthalocyanine organic thin-film transistors: changes in electrical performance and stability in response to temperature and environment

RSC Advances ◽  
2019 ◽  
Vol 9 (37) ◽  
pp. 21478-21485 ◽  
Author(s):  
Nicholas T. Boileau ◽  
Rosemary Cranston ◽  
Brendan Mirka ◽  
Owen A. Melville ◽  
Benoît H. Lessard
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Central Atom ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Organic Thin Film ◽  
Metal Phthalocyanine ◽  
Response To Temperature

A series of metal phthalocyanine based organic thin film transistors were evaluated and their responses to changes in temperature and environmental was determined: the choice of central atom makes a difference.

Influence of the semi-conductor layer thickness on electrical performance of staggered n- and p-channel organic thin-film transistors

2010 ◽  
Vol 11 (2) ◽  
pp. 291-298 ◽  
Author(s):  
D. Boudinet ◽  
M. Benwadih ◽  
S. Altazin ◽  
R. Gwoziecki ◽  
J.M. Verilhac ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Organic Thin Film
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