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Germanium-source L-shaped TFET with dual in-line tunneling junction
Applied Physics A
◽
10.1007/s00339-021-04677-5
◽
2021
◽
Vol 127
(7)
◽
Author(s):
Iman Chahardah Cherik
◽
Saeed Mohammadi
Keyword(s):
Tunneling Junction
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Characterization of nanometer scale titanium film oxidation lines and MIM tunneling junction structures
International Technology and Innovation Conference 2006 (ITIC 2006)
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10.1049/cp:20060806
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Author(s):
Liu Qinggang
◽
Chen Qing
◽
Li Suoyin
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He Botao
◽
Hu Xiaotang
Keyword(s):
Nanometer Scale
◽
Tunneling Junction
◽
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Fabrication of Nb<inf>3</inf>Ge/Si(SiO<inf>x</inf>)/Pb Josephson tunneling junction
IEEE Transactions on Magnetics
◽
10.1109/tmag.1983.1062416
◽
1983
◽
Vol 19
(3)
◽
pp. 938-941
◽
Cited By ~ 9
Author(s):
H. Ihara
◽
Y. Kimura
◽
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◽
S. Gonda
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Tunneling Junction
◽
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Bias pulse-controlled thermal spin injector based a single-molecule magnet tunneling junction
Physica E Low-dimensional Systems and Nanostructures
◽
10.1016/j.physe.2021.114981
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◽
pp. 114981
Author(s):
Zhengzhong Zhang
◽
Rui Bo
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Chao Wang
◽
Guang Song
◽
Weishi Tan
◽
...
Keyword(s):
Single Molecule
◽
Tunneling Junction
◽
Single Molecule Magnet
◽
Bias Pulse
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Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness
Journal of Applied Physics
◽
10.1063/1.3563096
◽
2011
◽
Vol 109
(7)
◽
pp. 07C731
◽
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Author(s):
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◽
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◽
Sangcheol Kim
◽
Ryan Stearrett
◽
Xiaoming Kou
◽
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Keyword(s):
Magnetic Field
◽
Layer Thickness
◽
Shape Anisotropy
◽
Tunneling Junction
◽
Free Layer
◽
Magnetic Field Sensors
◽
Magnetic Tunneling Junction
◽
Magnetic Tunneling
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Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate
Scientific Reports
◽
10.1038/srep06322
◽
2014
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Vol 4
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Chemical Vapor Deposition
◽
Sapphire Substrate
◽
Vapor Deposition
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Chemical Vapor
◽
Organic Chemical
◽
Tunneling Junction
◽
Metal Organic
◽
Organic Chemical Vapor Deposition
◽
Mg Doped
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Characterization of Josephson tunneling junction by lifetime of zero-voltage state and fiske self-resonant step
2013 IEEE International Conference on Applied Superconductivity and Electromagnetic Devices
◽
10.1109/asemd.2013.6780835
◽
2013
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◽
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◽
Jian She Liu
◽
Tie Fu Li
◽
Wei Chen
Keyword(s):
Tunneling Junction
◽
Josephson Tunneling
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2D write addressability of tunneling junction MRAM elements
IEEE Transactions on Magnetics
◽
10.1109/20.951022
◽
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◽
Vol 37
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◽
pp. 1963-1966
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◽
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Tunneling Junction
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Spin transfer torques and spin-dependent transport in a metallic F/AF/N tunneling junction
Physical Review B
◽
10.1103/physrevb.98.014406
◽
2018
◽
Vol 98
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◽
Cited By ~ 2
Author(s):
Kei Yamamoto
◽
Olena Gomonay
◽
Jairo Sinova
◽
Georg Schwiete
Keyword(s):
Spin Transfer
◽
Tunneling Junction
◽
Spin Dependent Transport
◽
Dependent Transport
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Bilayer-based Antiferroelectric HfZrO2 Tunneling Junction with High Tunneling Electroresistance and Multilevel Nonvolatile Memory
IEEE Electron Device Letters
◽
10.1109/led.2021.3107940
◽
2021
◽
pp. 1-1
Author(s):
K.-Y. Hsiang
◽
C.-Y. Liao
◽
J.-H. Liu
◽
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◽
S.-H. Chiang
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Specular transmission in nodal-line Weyl semimetal resonant tunneling junction
Applied Physics Letters
◽
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2020
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Vol 117
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Yu-Xian Li
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Resonant Tunneling
◽
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◽
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◽
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