scholarly journals Spin transfer torques and spin-dependent transport in a metallic F/AF/N tunneling junction

2018 ◽  
Vol 98 (1) ◽  
Author(s):  
Kei Yamamoto ◽  
Olena Gomonay ◽  
Jairo Sinova ◽  
Georg Schwiete
2018 ◽  
Vol 185 ◽  
pp. 01015
Author(s):  
Niazbeck Useinov

The theoretical model of spin-dependent transport in magnetic tunnel junctions (MTJ) containing magnetic or non-magnetic nanoparticle is developed. The dependences of tunnel magnetoresistance (TMR) and in-plane component of spin transfer torque (STT) on the applied voltage for various sizes of nanoparticles of the order of the mean free path of the conduction electron are calculated. The calculation is performed in the approximation of the ballistic transport of conduction electrons through the insulating layers of the MTJ and the nanoparticles.


2016 ◽  
Vol 500 ◽  
pp. 106-110 ◽  
Author(s):  
Benliang Zhou ◽  
Benhu Zhou ◽  
Guang Liu ◽  
Dan Guo ◽  
Guanghui Zhou

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yun Li ◽  
Xiaobo Li ◽  
Shidong Zhang ◽  
Liemao Cao ◽  
Fangping Ouyang ◽  
...  

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.


2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Yipeng An ◽  
Kun Wang ◽  
Shijing Gong ◽  
Yusheng Hou ◽  
Chunlan Ma ◽  
...  

AbstractTwo-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.


2020 ◽  
Vol 126 (7) ◽  
Author(s):  
Qian Liu ◽  
Yaqiang Tian ◽  
Xiaoping Zheng ◽  
Liansheng Chen ◽  
Yuqing Zhao ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (46) ◽  
pp. 40155-40161 ◽  
Author(s):  
Wei Wang ◽  
Yan-Dong Guo ◽  
Xiao-Hong Yan

Two-probe systems of transition metal atom (X)-encapsulated B40fullerene contacted with Au electrodes, where X = Fe, Mn, Ni, and Co.


2008 ◽  
Vol 104 (6) ◽  
pp. 064321
Author(s):  
Genhua Liu ◽  
Yonghai Chen ◽  
Yu Liu ◽  
Caihong Jia ◽  
Zhanguo Wang

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