Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Sapphire Substrate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Tunneling Junction ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Mg Doped

Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

Applied Physics Letters ◽

10.1063/1.4864300 ◽

2014 ◽

Vol 104 (5) ◽

pp. 053507 ◽

Cited By ~ 11

Author(s):

Kexiong Zhang ◽

Hongwei Liang ◽

Rensheng Shen ◽

Dongsheng Wang ◽

Pengcheng Tao ◽

...

Keyword(s):

Sapphire Substrate ◽

Vapor Deposition ◽

Negative Differential Resistance ◽

Chemical Vapor ◽

Differential Resistance ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Mg Doped

Microstructural analysis of InGaN/GaN epitaxial layers of metal organic chemical vapor deposition on c-plane of convex patterned sapphire substrate

Thin Solid Films ◽

10.1016/j.tsf.2013.05.111 ◽

2013 ◽

Vol 546 ◽

pp. 104-107 ◽

Cited By ~ 4

Author(s):

Zhixin Wan ◽

Yinsheng He ◽

Cheljong Choi ◽

Eunkyung Suh ◽

Young Moon Yu ◽

...

Keyword(s):

Sapphire Substrate ◽

Vapor Deposition ◽

Microstructural Analysis ◽

Chemical Vapor ◽

Organic Chemical ◽

Epitaxial Layers ◽

Patterned Sapphire Substrate ◽

Metal Organic ◽

Al0.17Ga0.83N Film Using Middle-Temperature Intermediate Layer Grown on (0001) Sapphire Substrate by Metal-Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.491 ◽

2007 ◽

Vol 46 (2) ◽

pp. 491-495 ◽

Cited By ~ 2

Author(s):

Kazuhide Sumiyoshi ◽

Masashi Tsukihara ◽

Ken Kataoka ◽

Syuichi Kawamichi ◽

Takashi Okimoto ◽

...

Keyword(s):

Sapphire Substrate ◽

Vapor Deposition ◽

Intermediate Layer ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Middle Temperature ◽

Extenuation of Stress and Defects in GaN Films Grown on a Metal–Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Crystal Growth & Design ◽

10.1021/acs.cgd.5b00125 ◽

2015 ◽

Vol 15 (5) ◽

pp. 2144-2150 ◽

Cited By ~ 30

Author(s):

Neha Aggarwal ◽

Shibin T. C. Krishna ◽

Lalit Goswami ◽

Monu Mishra ◽

Govind Gupta ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Sapphire Substrate ◽

Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Effects of Sapphire Substrate Preparation on ZnO Epitaxial Growth by Atmospheric-Pressure Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.342 ◽

2007 ◽

Vol 46 (1) ◽

pp. 342-344 ◽

Cited By ~ 6

Author(s):

Shutetsu Akiyama ◽

Kazunori Minegishi ◽

Tooru Tanaka ◽

Hiroshi Ogawa ◽

Masanobu Kasuga

Keyword(s):

Epitaxial Growth ◽

Sapphire Substrate ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Organic Chemical ◽

Substrate Preparation ◽

Metal Organic ◽

Improved crystal quality of GaN film with the in-plane lattice-matched In 0.17 Al 0.83 N interlayer grown on sapphire substrate using pulsed metal—organic chemical vapor deposition

Chinese Physics B ◽

10.1088/1674-1056/23/6/067103 ◽

2014 ◽

Vol 23 (6) ◽

pp. 067103

Author(s):

Liang Li ◽

Lin-An Yang ◽

Jun-Shuai Xue ◽

Rong-Tao Cao ◽

Sheng-Rui Xu ◽

...

Keyword(s):

Sapphire Substrate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Lattice Matched ◽

Gan Film

Influence of thermally diffused aluminum atoms from sapphire substrate on the properties of ZnO epilayers grown by metal-organic chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.3549136 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03A106 ◽

Cited By ~ 22

Author(s):

Kun Tang ◽

Shulin Gu ◽

Shuzhen Li ◽

Jiandong Ye ◽

Shunming Zhu ◽

...

Keyword(s):

Sapphire Substrate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

Current Applied Physics ◽

10.1016/j.cap.2011.03.078 ◽

2011 ◽

Vol 11 (4) ◽

pp. S90-S94 ◽

Cited By ~ 4

Author(s):

Geunho Yoo ◽

Hyunsung Park ◽

Donghun Lee ◽

Hyoungjin Lim ◽

Seunga Lee ◽

...

Keyword(s):

Sapphire Substrate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.105836 ◽

2021 ◽

Vol 131 ◽

pp. 105836

Author(s):

Adreen Azman ◽

Anas Kamarundzaman ◽

Ahmad Shuhaimi Abu Bakar ◽

Wan Haliza Abd Majid

Keyword(s):

Sapphire Substrate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

P Type ◽

Semipolar $(11\bar{2}2)$ and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition

Chinese Physics B ◽

10.1088/1674-1056/26/2/027801 ◽

2017 ◽

Vol 26 (2) ◽

pp. 027801

Author(s):

Sheng-Rui Xu ◽

Ying Zhao ◽

Ren-Yuan Jiang ◽

Teng Jiang ◽

Ze-Yang Ren ◽

...

Keyword(s):

Sapphire Substrate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽