Understanding the kinetics of Fe subsurface dissolution and surface segregation upon annealing Fe on Pd(111) in vacuum/oxygen environment

2022 ◽  
Vol 128 (2) ◽  
Author(s):  
Yi Yan ◽  
Fengmin Zhong ◽  
Songyou Lian ◽  
Zumin Wang ◽  
Jiangyong Wang ◽  
...  
Keyword(s):  
Surface Segregation ◽  
Oxygen Environment ◽  
Kinetics Of

Kinetics of surface segregation in alloys

1993 ◽  
Vol 290 (3) ◽  
pp. 345-361 ◽  
Author(s):  
Cs. Cserháti ◽  
H. Bakker ◽  
D.L. Beke
Keyword(s):  
Surface Segregation ◽  
Kinetics Of

A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
A.J. Ptak ◽  
T.H. Myers ◽  
Lijun Wang ◽  
N.C. Giles ◽  
M. Moldovan ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Rf Plasma ◽  
Dopant Incorporation ◽  
Optical Activation ◽  
P Type ◽  
Kinetics Of ◽  
Secondary Ion

ABSTRACTStep-doped structures of both magnesium and beryllium were grown in GaN and analyzed using secondary ion mass spectrometry. Dopant incorporation was studied as a function of substrate temperature and dopant flux for Ga-polarity and N-polarity GaN. Incorporation is different for each polarity, with Mg incorporating by up to a factor of 20 times more (30 times more with atomic hydrogen) on the Ga-face, while Be incorporates more readily on the N-face. The effect of atomic hydrogen on the incorporation kinetics of both Mg and Be is also discussed. Mg and Be both undergo surface segregation during growth. Photoluminescence measurements suggest that Be is a p-type dopant with an optical activation energy of approximately 100 meV.

Surface Reconstruction of (123) and (111) Ge(Sn) Solid Solutions Induced by Tin Segregation

1998 ◽  
Vol 05 (01) ◽  
pp. 265-268 ◽  
Author(s):  
A. Rolland ◽  
A. Rouabah ◽  
F. Cabané
Keyword(s):  
Phase Diagram ◽  
Comparative Study ◽  
Surface Reconstruction ◽  
Solid Solutions ◽  
Surface Segregation ◽  
Fair Agreement ◽  
Kinetic Curves ◽  
Surface Reconstructions ◽  
Kinetics Of

We present a comparative study of tin segregation onto the (123) and (111) surfaces of a Ge(Sn)- 0.5 at. % bicrystal using the AES technique. Between 350°C and 450°C, the maximum segregated tin amount, about 1.25 monolayer, does not vary with the orientation of the surface or the temperature. This indicates that attractive Sn-Sn forces are involved in the segregated phase which is in fair agreement with the Ge-Sn phase diagram. The shape of the kinetic curves depends on the orientation. On the (111) surface, the formation of various structures in equilibrium with the bulk is correlated with surface reconstructions. First, Sn atoms take the place of Ge adatoms to form a 2D phase; then, Sn segregates in other superficial sites, which leads to the nucleation of denser 2D phases, such as (7 × 7) structure. On the (123) surface, Sn atoms take the place of Ge atoms in quasisubstitutional sites of the superficial layers; the kinetics of surface segregation is not sensitive to sub monolayer structures.

Kinetics of sulfur surface segregation in Fe-6at%Si

1992 ◽  
Vol 261 (1-3) ◽  
pp. 267-274 ◽  
Author(s):  
M. Militzer ◽  
Yu.N. Ivashchenko ◽  
A.V. Krajnikov ◽  
P. Lejček ◽  
J. Wieting ◽  
...  
Keyword(s):  
Surface Segregation ◽  
Kinetics Of

Growth of Nonpolar (1100) Films and Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

2004 ◽  
Vol 831 ◽  
Author(s):  
Oliver Brandt ◽  
Yue Jun Sun ◽  
Klaus H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
High Energy ◽  
Growth Direction ◽  
Desorption Kinetics ◽  
Multiple Quantum ◽  
Kinetics Of

ABSTRACTWe discuss the growth of M-plane GaN films and (In, Ga)N/GaN multiple quantum well (MQW) structures on LiAlO2(100) substrates by plasma-assisted molecular beam epitaxy. The adsorption and desorption kinetics of Ga on M-plane GaN is studied by reflection high-energy electron diffraction, allowing us to identify the optimum growth conditions with regard to surface morphology. Furthermore, we investigate the compositional profile of M-plane (In, Ga)N/GaN MQWs grown under conditions resulting in comparatively abrupt interfaces. The results demonstrate that significant In surface segregation occurs for the case of M-plane (In, Ga)N. The dependence of the transition energies of the M-plane MQWs on the actual well thickness reveals, however, that the structures are indeed free of electrostatic fields along the growth direction.

Kinetics of sulfur and phosphorus surface segregation competition in copper

1994 ◽  
Vol 31 (11) ◽  
pp. 1501-1506 ◽  
Author(s):  
M. Militzer ◽  
S. Hofmann
Keyword(s):  
Surface Segregation ◽  
Kinetics Of

Ge/Ag(111): SURFACE ALLOY OF A SEMICONDUCTOR ON A METAL

1999 ◽  
Vol 06 (05) ◽  
pp. 929-934 ◽  
Author(s):  
H. OUGHADDOU ◽  
B. AUFRAY ◽  
J. M. GAY
Keyword(s):  
Phase Separation ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Surface Segregation ◽  
Experimental Studies ◽  
Surface Alloy ◽  
Layer By Layer ◽  
Kinetics Of ◽  
Monolayer Coverage

We present one of the first experimental studies of the formation of an ordered surface alloy of a semiconductor, Ge, and a metal, Ag, with bulk tendency to phase separation. The kinetics of growth at room temperature as well as the surface segregation of Ge have been investigated for the (111) orientation using Auger Electron Spectroscopy (AES) and Low Electron Energy Diffraction (LEED). The growth mode of Ge on Ag(111) is layer-by-layer like up to at least two layers. An unexpected ordered surface alloy forming a [Formula: see text] superstructure is observed during the growth at 1/3 germanium monolayer, followed by a p(7× 7) superstructure at one-monolayer coverage. The surface Ge segregation studied via both dissolution and segregation kinetics shows the particular stability of the ordered [Formula: see text] surface alloy.

The interrelation between the kinetics of the IPN formation at the interface with solid and surface segregation

Polymer ◽  
1999 ◽  
Vol 40 (23) ◽  
pp. 6485-6492 ◽  
Author(s):  
Y.S Lipatov ◽  
G.M Semenovich
Keyword(s):  
Surface Segregation ◽  
Kinetics Of
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