Characterization of amorphous silicon films by contactless transient photoconductivity measurements

1995 ◽  
Vol 61 (6) ◽  
pp. 623-629
Author(s):  
C. Swiatkowski ◽  
M. Kunst
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Transient Photoconductivity

Optical Characterization of Very Thin Hydrogenated Amorphous Silicon Films Using Spectroscopic Ellipsometry

1991 ◽  
Vol 30 (Part 2, No. 11B) ◽  
pp. L1914-L1916 ◽  
Author(s):  
Tadashi Saitoh ◽  
Nobuyasu Hori ◽  
Katsuyuki Suzuki ◽  
Shigeo Iida
Keyword(s):  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Hydrogenated Amorphous Silicon ◽  
Optical Characterization ◽  
Silicon Films ◽  
Hydrogenated Amorphous

Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films

1993 ◽  
Vol 32 (Part 2, No.1A/B) ◽  
pp. L20-L23 ◽  
Author(s):  
Toshiaki Shiraiwa ◽  
Osamu Sugiura ◽  
Hiroshi Kanoh ◽  
Norihito Asai ◽  
Koh-ichi Usami ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Chemical Vapor Deposited

Physical characterization of halogenated and hydrogenated amorphous silicon films

1980 ◽  
Vol 69 (3) ◽  
pp. 315-320 ◽  
Author(s):  
V. Augelli ◽  
R. Murri ◽  
S. Galassini ◽  
A. Tepore
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Physical Characterization ◽  
Hydrogenated Amorphous

Characterization of amorphous silicon films by Rutherford backscattering spectrometry

1980 ◽  
Vol 168 (1-3) ◽  
pp. 211-215 ◽  
Author(s):  
K. Kubota ◽  
T. Imura ◽  
M. Iwami ◽  
A. Hiraki ◽  
M. Satou ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Silicon Films

Microstructure Characterization of Hydrogenated Amorphous Silicon Films by Rare Gas Effusion Studies

2001 ◽  
Vol 664 ◽  
Author(s):  
Wolfhard Beyer
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Rare Gas ◽  
Rare Gases ◽  
Boron Doped ◽  
Rare Gas Atoms ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTThe effusion of the rare gases neon and helium, as well as of hydrogen, was studied for plasma deposited (boron-doped and undoped) hydrogenated amorphous silicon films, grown at various substrate temperatures. Rare gas atoms were incorporated into the material during the growth process or by ion implantation. The results suggest that helium and neon effusion spectra give information on the material microstructure.

Microstructure Characterization of Amorphous Silicon Films by Effusion Measurements of Implanted Helium

2013 ◽  
Vol 1536 ◽  
pp. 175-180 ◽  
Author(s):  
W. Beyer ◽  
W. Hilgers ◽  
D. Lennartz ◽  
F.C. Maier ◽  
N.H. Nickel ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Low Temperatures ◽  
Plasma Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hot Wire ◽  
Common Features ◽  
Hydrogenated Amorphous

ABSTRACTAn important property of thin film silicon and related materials is the microstructure which may involve the presence of interconnected and isolated voids. We report on effusion measurements of implanted helium (He) to detect such voids. Several series of hydrogenated and unhydrogenated amorphous silicon films prepared by the methods of plasma deposition, hot wire deposition and vacuum evaporation were investigated. The results show common features like a He effusion peak at low temperatures attributed to He out-diffusion through a compact material or through interconnected voids, and a He effusion peak at high temperatures attributed to He trapped in isolated voids. While undoped plasma-grown device-grade hydrogenated amorphous silicon (a-Si:H) films show a rather low concentration of such isolated voids, its concentration can be rather high in doped a-Si:H, in unhydrogenated evaporated material and others.

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