Optical Characterization of Very Thin Hydrogenated Amorphous Silicon Films Using Spectroscopic Ellipsometry

1991 ◽  
Vol 30 (Part 2, No. 11B) ◽  
pp. L1914-L1916 ◽  
Author(s):  
Tadashi Saitoh ◽  
Nobuyasu Hori ◽  
Katsuyuki Suzuki ◽  
Shigeo Iida
Keyword(s):  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Hydrogenated Amorphous Silicon ◽  
Optical Characterization ◽  
Silicon Films ◽  
Hydrogenated Amorphous

Spectroscopic Ellipsometry Characterization of Hydrogenated Amorphous Silicon Thin Film

2013 ◽  
Vol 33 (10) ◽  
pp. 1031001
Author(s):  
何剑 He Jian ◽  
李伟 Li Wei ◽  
徐睿 Xu Rui ◽  
郭安然 Guo Anran ◽  
祁康成 Qi Kangcheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous

Microstructure Characterization of Hydrogenated Amorphous Silicon Films by Rare Gas Effusion Studies

2001 ◽  
Vol 664 ◽  
Author(s):  
Wolfhard Beyer
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Rare Gas ◽  
Rare Gases ◽  
Boron Doped ◽  
Rare Gas Atoms ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

ABSTRACTThe effusion of the rare gases neon and helium, as well as of hydrogen, was studied for plasma deposited (boron-doped and undoped) hydrogenated amorphous silicon films, grown at various substrate temperatures. Rare gas atoms were incorporated into the material during the growth process or by ion implantation. The results suggest that helium and neon effusion spectra give information on the material microstructure.

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