Electric-field-enhanced metal-induced crystallization of hydrogenated amorphous silicon at room temperature

2002 ◽  
Vol 74 (4) ◽  
pp. 557-560 ◽  
Author(s):  
I. Pelant ◽  
P. Fojtík ◽  
K. Luterová ◽  
J. Kočka ◽  
A. Poruba ◽  
...  
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Metal Induced Crystallization ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

Room temperature electric field induced crystallization of wide band gap hydrogenated amorphous silicon

2001 ◽  
Vol 383 (1-2) ◽  
pp. 101-103 ◽  
Author(s):  
I. Pelant ◽  
P. Fojtík ◽  
K. Luterová ◽  
J. Kočka ◽  
K. Knížek ◽  
...  
Keyword(s):  
Electric Field ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Wide Band ◽  
Wide Band Gap ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

Vacuum-enhanced nickel-induced crystallization of hydrogenated amorphous silicon

2012 ◽  
Vol 112 (7) ◽  
pp. 073506 ◽  
Author(s):  
N. Budini ◽  
P. A. Rinaldi ◽  
R. D. Arce ◽  
J. A. Schmidt ◽  
R. R. Koropecki ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

1998 ◽  
Vol 227-230 ◽  
pp. 1164-1167 ◽  
Author(s):  
Oleg Gusev ◽  
Mikhail Bresler ◽  
Alexey Kuznetsov ◽  
Vera Kudoyarova ◽  
Petr Pak ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Er Doped ◽  
Hydrogenated Amorphous

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

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