Atomic Force Microscopy Studies of SnO 2 Thin Film Microstruc tures Deposited by Atomic Layer Epitaxy

2000 ◽  
Vol 133 (1-4) ◽  
pp. 119-123 ◽  
Author(s):  
Mikko Utriainen ◽  
Hanna Lattu ◽  
Heli Viirola ◽  
Lauri Niinist� ◽  
Roland Resch ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Force Microscopy ◽  
Atomic Force

Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy

1994 ◽  
Vol 33 (Part 2, No. 9B) ◽  
pp. L1292-L1294 ◽  
Author(s):  
Haruki Yokoyama ◽  
Masafumi Tanimoto ◽  
Masanori Shinohara ◽  
Naohisa Inoue
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Growth Processes ◽  
Force Microscopy ◽  
Atomic Force

Self-limiting and step-propagating nature of GaAs atomic layer epitaxy revealed by atomic force microscopy

1994 ◽  
Vol 82-83 ◽  
pp. 158-163 ◽  
Author(s):  
Haruki Yokoyama ◽  
Masafumi Tanimoto ◽  
Masanori Shinohara ◽  
Naohisa Inoue
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Force Microscopy ◽  
Atomic Force

A HfO2 Thin Film Resistive Switch Based on Conducting Atomic Force Microscopy

2011 ◽  
Vol 14 (8) ◽  
pp. H311 ◽  
Author(s):  
J. Y. Son ◽  
D.-Y. Kim ◽  
H. Kim ◽  
W. J. Maeng ◽  
Y.-S. Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Resistive Switch ◽  
Force Microscopy ◽  
Atomic Force

Effect of ultra-thin Cu underlayer on the magnetic properties of Ni80Fe50 / Fe50Mn50 films

1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Exchange Bias ◽  
Film Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Maximum Value ◽  
Film Roughness

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.

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