Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates

2018 ◽  
Vol 53 (24) ◽  
pp. 16439-16446 ◽  
Author(s):  
Qi Wang ◽  
Guodong Yuan ◽  
Tongbo Wei ◽  
Zhiqiang Liu ◽  
Wenqiang Liu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Selective Area

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

2008 ◽  
Vol 104 (10) ◽  
pp. 103530 ◽  
Author(s):  
W. Feng ◽  
V. V. Kuryatkov ◽  
A. Chandolu ◽  
D. Y. Song ◽  
M. Pandikunta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Green Light Emission

Selective area epitaxy of semipolar InGaN/GaN multiple quantum wells on GaN microfacets using crossover stripe patterns

2015 ◽  
Vol 83 ◽  
pp. 22-28 ◽  
Author(s):  
Zhenlong Wu ◽  
Peng Chen ◽  
Guofeng Yang ◽  
Zhou Xu ◽  
Feng Xu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Selective Area

Response to “Comment on ‘Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells’ ” [Appl. Phys. Lett. 81, 3100 (2002)]

2002 ◽  
Vol 81 (16) ◽  
pp. 3102-3103 ◽  
Author(s):  
H. K. Cho ◽  
J. Y. Lee ◽  
N. Sharma ◽  
C. J. Humphreys ◽  
G. M. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

2011 ◽  
Vol 679-680 ◽  
pp. 801-803
Author(s):  
Ji Sheng Han ◽  
Sima Dimitrjiev ◽  
Li Wang ◽  
Alan Iacopi ◽  
Qu Shuang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Light Emission ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Structural Quality ◽  
Multiple Quantum ◽  
Si Substrate ◽  
Si Substrates

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells

2001 ◽  
Vol 79 (16) ◽  
pp. 2594-2596 ◽  
Author(s):  
H. K. Cho ◽  
J. Y. Lee ◽  
N. Sharma ◽  
C. J. Humphreys ◽  
G. M. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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