Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy

2015 ◽  
Vol 331 ◽  
pp. 444-448 ◽  
Author(s):  
Zhenlong Wu ◽  
Peng Chen ◽  
Guofeng Yang ◽  
Zhou Xu ◽  
Feng Xu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Morphology Evolution ◽  
Selective Area Epitaxy ◽  
Emission Properties ◽  
Selective Area

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

2008 ◽  
Vol 104 (10) ◽  
pp. 103530 ◽  
Author(s):  
W. Feng ◽  
V. V. Kuryatkov ◽  
A. Chandolu ◽  
D. Y. Song ◽  
M. Pandikunta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Green Light Emission

Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates

2018 ◽  
Vol 53 (24) ◽  
pp. 16439-16446 ◽  
Author(s):  
Qi Wang ◽  
Guodong Yuan ◽  
Tongbo Wei ◽  
Zhiqiang Liu ◽  
Wenqiang Liu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Selective Area

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

2013 ◽  
Vol 22 (7) ◽  
pp. 076803 ◽  
Author(s):  
Wen-Yu Cao ◽  
Yong-Fa He ◽  
Zhao Chen ◽  
Wei Yang ◽  
Wei-Min Du ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diode ◽  
Diode Structure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties

Effects of the material polarity on the green emission properties of InGaN∕GaN multiple quantum wells

2006 ◽  
Vol 89 (15) ◽  
pp. 151906 ◽  
Author(s):  
Yen-Lin Lai ◽  
Chuan-Pu Liu ◽  
Yung-Hsiang Lin ◽  
Ray-Ming Lin ◽  
Dong-Yuan Lyu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties

Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
K. C. Zeng ◽  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
H. Tang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties ◽  
Si Doping ◽  
Doping Effects ◽  
Pl Emission

AbstractEffects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x ∼ 0.07) and InxGa1-xN/GaN (x ∼ 0.15–0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.

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