scholarly journals Correction to: Electrical transport in amorphous Se1 − xSbx thin films

Author(s):  
P. Sikka ◽  
H. Kumar
2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Afroz Khan ◽  
F. Rahman ◽  
Razia Nongjai ◽  
K. Asokan

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Van Hien-Hoang ◽  
Nak-Kwan Chung ◽  
Heon-Jung Kim

AbstractThe Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La1−xPrxNiO3−δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d eg electrons in Ni2+, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni2+ acts as an impurity in the background of Ni3+. We suggest that when Ni2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni3+ and Ni2+ ions, as well as structural disorder.


2020 ◽  
Vol 114 ◽  
pp. 105080 ◽  
Author(s):  
B. Tiss ◽  
N. Bouguila ◽  
M. Kraini ◽  
K. Khirouni ◽  
C. Vázquez–Vázquez ◽  
...  

2006 ◽  
Vol 17 (20) ◽  
pp. 5244-5247 ◽  
Author(s):  
K Mohan Kant ◽  
N Mahipal Reddy ◽  
N Rama ◽  
K Sethupathi ◽  
M S Ramachandra Rao

ACS Nano ◽  
2014 ◽  
Vol 8 (7) ◽  
pp. 7513-7521 ◽  
Author(s):  
Zachariah M. Norman ◽  
Nicholas C. Anderson ◽  
Jonathan S. Owen

2017 ◽  
Vol 47 (3) ◽  
pp. 1806-1818 ◽  
Author(s):  
Tariq M. Al-Daraghmeh ◽  
Mahmoud H. Saleh ◽  
Mais Jamil A. Ahmad ◽  
Basim N. Bulos ◽  
Khawla M. Shehadeh ◽  
...  

1994 ◽  
Vol 339 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden

ABSTRACTIntroduction of a buffer layer to facilitate heteroepitaxy in thin films of the Group IIIA nitrides has had a tremendous impact on growth morphology and electrical transport. While AIN- and self-seeded growth of GaN has captured the majority of attention, the use of AIN-buffered substrates for InN thin films has also had considerable success. Herein, the properties of InN thin films grown by reactive magnetron sputtering on AIN-buffered (00.1) sapphire and (111) silicon are presented and, in particular, the evolution of the structural and electrical transport properties as a function of buffer layer sputter time (corresponding to thicknesses from ∼50Å to ∼0.64 μm) described. Pertinent results include: (a) for the InN overlayer, structural coherence and homogeneous strain normal to the (00.1) growth plane are highly dependent on the thickness of the AIN-buffer layer; (b) the homogeneous strain in the AIN-buffer layer is virtually nonexistent from a thickness of 200Å (where a significant X-ray intensity for (00.2)AIN is observed); and (c) the n-type electrical mobility for films on AIN-nucleated (00.1) sapphire is independent of AIN-buffer layer thickness, owing to divergent variations in carrier concentration and film resistivity. These effects are in the main interpreted as arising from a competition between the lattice mismatch of the InN overlayer with the substrate and with the AIN-buffer layer.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.


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