Dependence of the electrical and optical properties of sputter-deposited ZnO:Ga films on the annealing temperature, time, and atmosphere

2006 ◽  
Vol 18 (4) ◽  
pp. 385-390 ◽  
Author(s):  
Keunbin Yim ◽  
Chongmu Lee
Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1024
Author(s):  
Jingjing Peng ◽  
Changshan Hao ◽  
Hongyan Liu ◽  
Yue Yan

Highly transparent indium-free multilayers of TiO2/Cu/TiO2 were obtained by means of annealing. The effects of Cu thickness and annealing temperature on the electrical and optical properties were investigated. The critical thickness of Cu mid-layer with optimal electrical and optical properties was 10 nm, with the figure of merit reaching as high as 5 × 10−3 Ω−1. Partial crystallization of the TiO2 layer enhanced the electrical and optical properties upon annealing. Electrothermal experiments showed that temperatures of more than 100 °C can be reached at a heating rate of 2 °C/s without any damage to the multilayers. The experimental results indicate that reliable transparent TiO2/Cu/TiO2 multilayers can be used for electrothermal application.


1992 ◽  
Vol 54 (2) ◽  
pp. 181-185 ◽  
Author(s):  
M. Amiotti ◽  
E. Bellandi ◽  
A. Borghesi ◽  
A. Piaggi ◽  
G. Guizzetti ◽  
...  

1992 ◽  
Vol 268 ◽  
Author(s):  
J.G. Cook ◽  
H. Moeller ◽  
S.R. Das ◽  
Li Zhongming

ABSTRACTCaF2 films have been deposited by evaporation onto H-passivated (111) Si in the presence of an rf discharge. The discharge is seen to promote epitaxy. Emission spectroscopy reveals strong CaF2 bands and a weak Ca line, indicating that deposition is largely molecular but that some breakup of the CaF2 molecules occurs in the discharge. Electrical and optical properties of these films were substantially better than those of sputter-deposited films.


2005 ◽  
Vol 493 (1-2) ◽  
pp. 83-87 ◽  
Author(s):  
J. Santos-Cruz ◽  
G. Torres-Delgado ◽  
R. Castanedo-Perez ◽  
S. Jiménez-Sandoval ◽  
O. Jiménez-Sandoval ◽  
...  

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