ZnO thin films is a kind of very potential semiconductor materials, due to their excellent chemical, electrical and optical properties. The effects of annealing temperature and coating layers on properties of ZnO thin films prepared by sol-gel immerse technique is studied in this work. The structure properties and optical properties were investigated by XRD, SEM and UV-Vis spectrophotometry respectively. It is found that the thin films were composed of better hexagonal wurtzite crystals with the c-axis preferred orientation by thermal annealing 550°C. With coating layers increasing from 2 layers to 8 layers, the intensity for all diffraction peaks were increased gradually, and the crystallite size of ZnO thin films is slightly increased. The transmittance of prepared thin films is over 80% in the visible-near IR region from 460 nm - 800 nm.
Structural, Electrical, and Optical Properties of AZO Thin Films Subjected to Rapid Thermal Annealing Temperature