Deep-Level Transient Spectroscopy Studies of Filling Behavior of a Hydrogen-Related Metastable Defect in n-Type Silicon

AbstractElectron traps in Czochralski–grown n-type (100) silicon with and without donor annihilation annealing have been studied by deep–level transient spectroscopy. A total of eight electron traps are observed in the concentration range 1010 –1011 cm −3. It is thought that these are grown–in defects during crystal growth cooling period including donor annihilation annealing. It is suggested that two electron traps labelled A2 (Ec–0.34 eV) and A3 (Ec–0.38 eV) of these traps are correlated with oxygen–related defects. It is shown that traps A2 and A3 are formed around 400 ° C and disappear around 500–600 ° C.

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Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies

Journal of Applied Physics ◽

10.1063/1.4883317 ◽

2014 ◽

Vol 115 (22) ◽

pp. 224504 ◽

Cited By ~ 28

Author(s):

Mohammad A. Mannan ◽

Sandeep K. Chaudhuri ◽

Khai V. Nguyen ◽

Krishna C. Mandal

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Alpha Spectroscopy ◽

Epitaxial Layers ◽

Transient Spectroscopy ◽

Spectroscopy Studies ◽

Deep Defects

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Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

Journal of Materials Research ◽

10.1557/jmr.1989.0241 ◽

1989 ◽

Vol 4 (2) ◽

pp. 241-243 ◽

Cited By ~ 4

Author(s):

Yutaka Tokuda ◽

Nobuji Kobayashi ◽

Yajiro Inoue ◽

Akira Usami ◽

Makoto Imura

Keyword(s):

Heat Treatment ◽

Thermal Stress ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Electron Trap ◽

Thermal Donor ◽

Transient Spectroscopy ◽

Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

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Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.242.163 ◽

2015 ◽

Vol 242 ◽

pp. 163-168 ◽

Cited By ~ 2

Author(s):

Ilia L. Kolevatov ◽

Frank Herklotz ◽

Viktor Bobal ◽

Bengt Gunnar Svensson ◽

Edouard V. Monakhov

Keyword(s):

Schottky Diode ◽

Deep Level Transient Spectroscopy ◽

Minority Carrier ◽

Deep Level ◽

Energy Levels ◽

Depletion Region ◽

Type Silicon ◽

Oxygen Center ◽

Hydrogen Vacancy ◽

Transient Spectroscopy

The evolution of irradiation-induced and hydrogen-related defects in n-type silicon in the temperature range 0 – 300 °C has been studied by deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). Implantation of a box-like profile of hydrogen was performed into the depletion region of a Schottky diode to undertake the DLTS and MCTS measurements. Proportionality between the formation of two hydrogen-related deep states and a decrease of the vacancy-oxygen center concentration was found together with the appearance of new hydrogen-related energy levels.

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