Effects of magnetic field on the structural and optical properties of nanocrystalline silicon thin films deposited by helicon wave plasma chemical vapor deposition

2005 ◽  
Author(s):  
Wei Yu ◽  
Li Zhang ◽  
Baozhu Wang ◽  
Xiaoxia Han ◽  
Wei Sun ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Structural And Optical Properties ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Thin Films ◽  
Helicon Wave

In Situ Ellipsometric Monitoring of the Growth of Polycrystalline Silicon Thin Films by RF Plasma Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4191-4194 ◽  
Author(s):  
Kunihide Tachibana ◽  
Tatsuru Shirafuji ◽  
Yasuaki Hayashi ◽  
Shinji Maekawa ◽  
Tatsuo Morita
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Thin Films

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (8) ◽  
pp. 660-663
Author(s):  
Hideo OKAYAMA ◽  
Tsukasa KUBO ◽  
Noritaka MOCHIZUKI ◽  
Akiyoshi NAGATA ◽  
Hiromu ISA
Keyword(s):  
Thin Films ◽  
Fuel Cell ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

Sign in / Sign up

Export Citation Format

Share Document