High performance humidity sensing properties of indium tin oxide (ITO) thin films by sol–gel spin coating method

2016 ◽  
Vol 28 (3) ◽  
pp. 2442-2447 ◽  
Author(s):  
B. Murali Babu ◽  
S. Vadivel
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
High Performance ◽  
Sol Gel ◽  
Humidity Sensing ◽  
Coating Method ◽  
Ito Thin Films ◽  
Humidity Sensing Properties

Effects of Annealing Temperature of Indium Tin Oxide Thin Films Prepared onto Glass by Sol-Gel Spin Coating Method

2011 ◽  
Vol 343-344 ◽  
pp. 116-123
Author(s):  
Yu Ming Peng ◽  
Yan Kuin Su ◽  
Cheng Jye Chu ◽  
Ru Yuan Yang ◽  
Ruei Ming Huang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Optical And Electrical Properties ◽  
Coating Method ◽  
Ito Thin Films

In this paper, the indium tin oxide (ITO) thin films were prepared by a sol-gel spin coating method and then annealed under different temperatures (400, 500 and 550°C) in a mixture atmosphere of 3.75% H2 with 96.25% N2 gases. The microstructure, optical and electrical properties of the prepared films were investigated and discussed. The XRD patterns of the ITO thin films indicated the main peak of the (222) plane and showed a high degree of crystallinity with an increase of the annealing temperature. In addition, due to the pores existing in the prepared films, the optical and electrical properties of the prepared films are degraded through the sol-gel process. Thus, the best transmittance of 70.0 %in the visible wavelength region and the lowest resistivity of about 1.1×10-2 Ω-cm were obtained when the prepared film was annealed at 550°C.

Effects of Annealing Condition on the Preparation of Indium-Tin Oxide (ITO) Thin Films via Sol-Gel Spin Coating Process

2005 ◽  
Vol 492-493 ◽  
pp. 325-330
Author(s):  
Hyun-Woong Han ◽  
Young Hoon Yun ◽  
Sung Churl Choi
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Process ◽  
Coating Process ◽  
Spin Coating Process ◽  
Ito Thin Films ◽  
Surface Morphologies

Indium tin oxide (ITO) thin films were deposited on glass substrates via sol-gel spin coating process from a mixed solution of Indium (Ⅲ) acetylacetonate and Tin (Ⅳ) iso-propoxide. Then, ITO thin films were fired at 500°C, and then annealed at 500°C for 30 min with the sequential annealing process; VacuumN2Ar/H2, N2Ar/H2 and Ar/H2 gas. The effects of the different annealing processes on the surface morphologies and sheet resistance of ITO thin films were investigated. Sheet resistance values of ITO thin films treated under VacuumN2Ar/H2, N2Ar/H2 and Ar/H2 annealing process were 1.25 kohm/sq., 3.18 kohm/sq. and 4.92 kohm/sq., respectively. Actually, the sequential atmosphere gases and non-oxidizing gas, which were used in annealing process influenced the microstructural features or surface morphologies of ITO thin films: grain size and surface roughness. Thus, it was presumed that the sequential annealing condition influenced the densification behavior in the microstructural evolution of ITO thin films.

Preparation of N-Doped TiO2/NiO Composite Electrode and its Photoelectrochemcal Characteristics

2011 ◽  
Vol 306-307 ◽  
pp. 344-347
Author(s):  
Chun Tao Wang ◽  
Wen Kui Zhang ◽  
Hui Huang ◽  
Xin Yong Tao
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Composite Electrode ◽  
Sol Gel ◽  
Photoelectrochemical Properties ◽  
Visible Transmittance ◽  
Coating Method ◽  
Uv Visible ◽  
Transient Measurements

TiO2-xNx film was prepared by the combination of sol-gel and spin-coating method on indium-tin oxide (ITO) conducting glass substrate. Then an ITO/TiO2-xNx/NiO composite electrode was obtained by chemical bath deposition (CBD). The morphology, crystal structure and composition of the ITO/TiO2-xNx film were characterized by SEM, XRD, and XPS. The photoelectrochemical properties of the ITO/TiO2-xNx/NiO electrode were evaluated by photocurrent transient measurements and UV-visible transmittance spectra. The results showed that the ITO/TiO2-xNx/NiO electrode was sensitive to light and exhibited a noticeable photoelectrochromism.

scholarly journals Effect of Zn-Doping on the Structural, Optical, and Humidity Sensing Properties of Sol-Gel Synthesized NiO Thin Film

2019 ◽  
Vol 8 (4) ◽  
pp. 6745-6749
Keyword(s):  
Thin Film ◽  
Structural Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Humidity Sensing ◽  
Sensing Properties ◽  
Spin Coating Method ◽  
Nio Thin Film ◽  
Coating Method ◽  
Humidity Sensing Properties

This paper presents the fabrication process and characterization process of zinc (Zn) doped nickel oxide (NiO) thin film. The main objective of this research is to investigate the electrical and structural properties of Zn-doped NiO thin film using sol-gel spin-coating method. Zn-doped NiO thin film was prepared by using spin-coating method. The samples were prepared at different doping parameters, which are undoped NiO, 0.5 at.% Zn-doped NiO, 1.0 at.% Zn-doped NiO, 1.5 at.% Zn-doped NiO and 2.0 at.% Zn-doped NiO. The studies of structural properties of the samples were conducted by using an X-ray diffraction. The optical properties of the samples were characterized by using ultraviolet-visible spectroscopy. The spectra of transmittance and absorbance of the samples were studied. The humidity sensing properties of the samples were conducted using humidity chamber and sensor measurement system.

Improvement of Structural, Electrical, and Optical Properties of Sol–Gel-Derived Indium–Tin-Oxide Films by High Efficiency Microwave Irradiation

2021 ◽  
Vol 21 (3) ◽  
pp. 1875-1882
Author(s):  
Sung-Hun Kim ◽  
Won-Ju Cho
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Microwave Irradiation ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Microwave Power ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

Herein, indium–tin-oxide (ITO) thin films are prepared by a solution-based spin-coating process followed by a heat-treatment process with microwave irradiation (MWI). The structural, electrical and optical properties of the films are investigated. The properties of the microwave-irradiated sol–gel ITO films are compared with those of as-spun ITO films and sol–gel ITO films subjected to conventional furnace annealing (CFA) or a rapid thermal process (RTP). After microwave irradiation, the sol–gel ITO thin films are found to have crystallized, and they indicate enhanced conductivity and transparency. Furthermore, the resistances of the ITO films are decreased considerably at increased microwave power levels, and the resistivity of the films almost saturate even at a low microwave power of 500 W. The improved physical properties of the MW-irradiated samples are mainly due to the increase in the electron concentration of the ITO films and the increase in the carrier mobility after MWI.

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