Improvement of Structural, Electrical, and Optical Properties of Sol–Gel-Derived Indium–Tin-Oxide Films by High Efficiency Microwave Irradiation

2021 ◽  
Vol 21 (3) ◽  
pp. 1875-1882
Author(s):  
Sung-Hun Kim ◽  
Won-Ju Cho
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Microwave Irradiation ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Microwave Power ◽  
Sol Gel ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

Herein, indium–tin-oxide (ITO) thin films are prepared by a solution-based spin-coating process followed by a heat-treatment process with microwave irradiation (MWI). The structural, electrical and optical properties of the films are investigated. The properties of the microwave-irradiated sol–gel ITO films are compared with those of as-spun ITO films and sol–gel ITO films subjected to conventional furnace annealing (CFA) or a rapid thermal process (RTP). After microwave irradiation, the sol–gel ITO thin films are found to have crystallized, and they indicate enhanced conductivity and transparency. Furthermore, the resistances of the ITO films are decreased considerably at increased microwave power levels, and the resistivity of the films almost saturate even at a low microwave power of 500 W. The improved physical properties of the MW-irradiated samples are mainly due to the increase in the electron concentration of the ITO films and the increase in the carrier mobility after MWI.

Effect of Inactivated Dopants Clusters and Processing Parameters on Electrical Properties of Indium Tin Oxide on Plastic Substrates

2008 ◽  
Vol 1074 ◽  
Author(s):  
Hauk Han ◽  
Jay Lewis ◽  
Terry Alford
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rutherford Backscattering Spectrometry ◽  
Rf Sputtering ◽  
Processing Parameters ◽  
Electrical And Optical Properties ◽  
Ito Thin Films ◽  
Ito Films

ABSTRACTIndium tin oxide (ITO) thin films were deposited on polyethylene napthalate (PEN) by rf sputtering using different rf powers (60 and 120 W) and at different substrate temperatures (room temperature and 100 °C). Rutherford backscattering spectrometry was used to determine the oxygen content in the films. Hall effect measurements were used to evaluate the electrical properties. In this paper the influence of defect structure, sputtering conditions, and the effect of annealing on the electrical and optical properties of ITO on PEN have been investigated. Electrical properties such as carrier concentration, mobility, and resistivity of the ITO films varied with rf power and substrate temperature. The electricalproperties of the films changed after annealing in air. This study also describes how the as-deposited amorphous ITO changes from amorphous to crystalline as a result of heat treatment, and investigates the effects of Sn defect clustering on electrical and optical properties of the ITO films.

scholarly journals Enhancement of Electrical Properties of Sol–Gel Indium–Tin–Oxide Films by Microwave Irradiation and Plasma Treatment

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1167
Author(s):  
Sung-Hun Kim ◽  
Won-Ju Cho
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Microwave Irradiation ◽  
Plasma Treatment ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
X Ray ◽  
Ito Thin Films ◽  
Ar Plasma

We proposed the enhancement of the electrical properties of solution-processed indium–tin–oxide (ITO) thin films through microwave irradiation (MWI) and argon (Ar) gas plasma treatment. A cost- and time-effective heat treatment through MWI was applied as a post-deposition annealing (PDA) process to spin-coated ITO thin films. Subsequently, the sheet resistance of MWI ITO thin films was evaluated before and after plasma treatment. The change in the sheet resistance demonstrated that MWI PDA and Ar plasma treatment significantly improved the electrical properties of the ITO thin films. Furthermore, X-ray photoelectron spectroscopy and X-ray diffraction analyses showed that the electrical properties of the ITO thin films were enhanced by the increase in oxygen vacancies due to the ion bombardment effect of high-energy plasma ions during Ar plasma treatment. Changes in the band gap structure of the ITO thin film due to the ion bombardment effect were also analyzed. The combination of MWI PDA and Ar plasma treatment presents new possibilities for improving the high-conductivity sol–gel ITO electrode.

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

Structural and Optical Properties of InSnO3 Sol-Gel Coatings to Use in Windows Glass Buildings

2010 ◽  
Vol 168-170 ◽  
pp. 2348-2351
Author(s):  
Lazaro De Jesus Dominguez Gallegos ◽  
Angélica Silvestre López Rodríguez ◽  
Pio Sifuentes Gallardo ◽  
Miguel Angel Hernández Rivera ◽  
María Guadalupe Garnica Romo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Visible Region ◽  
Optical Transmittance ◽  
Indium Chloride ◽  
Glass Substrates ◽  
Tin Chloride ◽  
Ito Thin Films ◽  
Ito Films

Indium stannate (InSnO3) films doping with small amounts of copper are made highly useful as architectural window coatings. Indium-tin-oxide (ITO) has attracted intense interest due to some of its unique characteristics; it has high optical transmittance in the visible region, low electric resistivity, and chemical stability. Therefore, ITO thin films have been found to play an important role in opto-electronic applications. In this work, uniform and transparent ITO films were deposited onto glass substrates using a sol-gel process. The initial sols were prepared by mixing solutions of indium chloride prepared in anhydrous ethanol with tin chloride and mechanically stirring and refluxed 2 hours and aged 2 week, the resultant mixture until a clear and sticky coating sol was obtained. The glass substrates were spin-coated and annealed at 500 °C. Because annealing conditions affect the microstructures, the properties of the resultant ITO films can be controlled. The optical transmittance of 200 nm thick ITO film was more than 80% in the visible region. The surface morphology examined by SEM appears to be uniform over large surface areas. The structural, microstructural and optical properties of the coatings and powders made from the sols were extensively characterized by using XRD, AFM and spectrophotometer techniques

INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (05) ◽  
pp. 1350045 ◽  
Author(s):  
BO HE ◽  
LEI ZHAO ◽  
JING XU ◽  
HUAIZHONG XING ◽  
SHAOLIN XUE ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
High Quantum Efficiency ◽  
Ito Thin Films ◽  
Ito Films

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω• cm , while the carrier concentration and mobility are as high as 3.461 × 1021 atom∕cm3 and 19.1 cm2∕V⋅s, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

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