Fabrication of indium tin oxide (ITO) thin films by spin-coating deposition method

2007 ◽  
Author(s):  
P. Psuja ◽  
W. Strek
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Deposition Method ◽  
Coating Deposition ◽  
Ito Thin Films

Effects of Annealing Temperature of Indium Tin Oxide Thin Films Prepared onto Glass by Sol-Gel Spin Coating Method

2011 ◽  
Vol 343-344 ◽  
pp. 116-123
Author(s):  
Yu Ming Peng ◽  
Yan Kuin Su ◽  
Cheng Jye Chu ◽  
Ru Yuan Yang ◽  
Ruei Ming Huang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Optical And Electrical Properties ◽  
Coating Method ◽  
Ito Thin Films

In this paper, the indium tin oxide (ITO) thin films were prepared by a sol-gel spin coating method and then annealed under different temperatures (400, 500 and 550°C) in a mixture atmosphere of 3.75% H2 with 96.25% N2 gases. The microstructure, optical and electrical properties of the prepared films were investigated and discussed. The XRD patterns of the ITO thin films indicated the main peak of the (222) plane and showed a high degree of crystallinity with an increase of the annealing temperature. In addition, due to the pores existing in the prepared films, the optical and electrical properties of the prepared films are degraded through the sol-gel process. Thus, the best transmittance of 70.0 %in the visible wavelength region and the lowest resistivity of about 1.1×10-2 Ω-cm were obtained when the prepared film was annealed at 550°C.

Effects of Annealing Condition on the Preparation of Indium-Tin Oxide (ITO) Thin Films via Sol-Gel Spin Coating Process

2005 ◽  
Vol 492-493 ◽  
pp. 325-330
Author(s):  
Hyun-Woong Han ◽  
Young Hoon Yun ◽  
Sung Churl Choi
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Process ◽  
Coating Process ◽  
Spin Coating Process ◽  
Ito Thin Films ◽  
Surface Morphologies

Indium tin oxide (ITO) thin films were deposited on glass substrates via sol-gel spin coating process from a mixed solution of Indium (Ⅲ) acetylacetonate and Tin (Ⅳ) iso-propoxide. Then, ITO thin films were fired at 500°C, and then annealed at 500°C for 30 min with the sequential annealing process; VacuumN2Ar/H2, N2Ar/H2 and Ar/H2 gas. The effects of the different annealing processes on the surface morphologies and sheet resistance of ITO thin films were investigated. Sheet resistance values of ITO thin films treated under VacuumN2Ar/H2, N2Ar/H2 and Ar/H2 annealing process were 1.25 kohm/sq., 3.18 kohm/sq. and 4.92 kohm/sq., respectively. Actually, the sequential atmosphere gases and non-oxidizing gas, which were used in annealing process influenced the microstructural features or surface morphologies of ITO thin films: grain size and surface roughness. Thus, it was presumed that the sequential annealing condition influenced the densification behavior in the microstructural evolution of ITO thin films.

scholarly journals Different electrode anodes used in OLED devices Diferentes eletrodos anodos usados em dispositivos OLEDs

2021 ◽  
Author(s):  
Emerson Roberto Santos ◽  
Thiago de Carvalho Fullenbach ◽  
Marina Sparvoli Medeiros ◽  
Luis da Silva Zambom ◽  
Roberto Koji Onmori ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Threshold Voltage ◽  
Indium Tin Oxide ◽  
Light Emitting Diode ◽  
Electrical Current ◽  
High Threshold ◽  
Diamond Coatings ◽  
Ito Thin Films ◽  
Order Of Magnitude

Transparent conductive oxides (TCOs) known as indium tin oxide (ITO) and fluorine tin oxide (FTO) deposited on glass were compared by different techniques and also as anodes in organic light-emitting diode (OLED) devices with same structure. ITO produced at laboratory was compared with the commercial one manufactured by different companies: Diamond Coatings, Displaytech and Sigma-Aldrich, and FTO produced at laboratory was compared with the commercial one manufactured by Flexitec Company. FTO thin films produced at laboratory presented the lowest performance measured by Hall effect technique and also by I-V curve of OLED device with low electrical current and high threshold voltage. ITO thin films produced at laboratory presented elevated sheet resistance in comparison with commercial ITOs (approximately one order of magnitude greater), that can be related by a high number of defects as discontinuity of the chemical lattice or low crystalline structure. In the assembly of OLED devices with ITO and FTO produced at laboratory, neither presented luminances. ITO manufactured by Sigma-Aldrich company presented better electrical and optical characteristics, as low electrical resistivity, good wettability, favorable transmittance, perfect physicalchemical stability and lowest threshold voltage (from 3 to 4.5 V) for OLED devices.

Effects of the Concentration of Indium-tin-oxide (ITO) Ink on the Characteristics of Directly-printed ITO Thin Films

2010 ◽  
Vol 57 (6(1)) ◽  
pp. 1794-1798 ◽  
Author(s):  
Jong-Woong Kim ◽  
Jangwoo Choi ◽  
Sung-Jei Hong ◽  
Jeong-In Han ◽  
Young-Sung Kim
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ito Thin Films

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

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