Effect of annealing temperature on structural, optical and humidity sensing properties of indium tin oxide (ITO) thin films

In this paper, the indium tin oxide (ITO) thin ﬁlms were prepared by a sol-gel spin coating method and then annealed under different temperatures (400, 500 and 550°C) in a mixture atmosphere of 3.75% H2 with 96.25% N2 gases. The microstructure, optical and electrical properties of the prepared films were investigated and discussed. The XRD patterns of the ITO thin films indicated the main peak of the (222) plane and showed a high degree of crystallinity with an increase of the annealing temperature. In addition, due to the pores existing in the prepared films, the optical and electrical properties of the prepared films are degraded through the sol-gel process. Thus, the best transmittance of 70.0 %in the visible wavelength region and the lowest resistivity of about 1.1×10-2 Ω-cm were obtained when the prepared film was annealed at 550°C.

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Temperature effect on optical properties of nickel (ii) phthalocyanine tetrasulfonic acid tetrasodium salt (NiPcTs) organic thin films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v13i28.242 ◽

2019 ◽

Vol 13 (28) ◽

pp. 44-51

Author(s):

Ameer F. Abdulameer

Keyword(s):

Thin Films ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Annealing Temperature ◽

Optical Band Gap ◽

Organic Thin Films ◽

Effect Of Temperature ◽

Good Information ◽

Energy Gaps ◽

Ito Glass

This study describe the effect of temperature on the opticalproperties of nickel(ii) phthalocyanine tetrasulfonic acid tetrasodiumsalt (NiPcTs) organic thin films which are prepared by spin coatingon indium tin oxide (ITO-glass). The optical absorption spectra ofthese thin films are measured. Present studies reveal that the opticalband gap energies of NiPcTs thin films are dependent on theannealing temperatures. The optical band gap decreases with increasein annealing temperature, then increased when the temperature risingto 473K. To enhance the results of Uv-Vis measurements and getmore accurate values of optical energy gaps; the Photoluminescencespectra of as-deposited and annealed NiPcTs thin films was studied.FTIR measurements for NiPcTs thin films also carried out in thiswork and gave good information about the NiPcTs bonds and itslocations as a compared with H2Pc as a reference.

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Different electrode anodes used in OLED devices Diferentes eletrodos anodos usados em dispositivos OLEDs

ESTIMA Brazilian Journal of Enterostomal Therapy ◽

10.30886/rbav.v40.1205 ◽

2021 ◽

Author(s):

Emerson Roberto Santos ◽

Thiago de Carvalho Fullenbach ◽

Marina Sparvoli Medeiros ◽

Luis da Silva Zambom ◽

Roberto Koji Onmori ◽

...

Keyword(s):

Thin Films ◽

Tin Oxide ◽

Threshold Voltage ◽

Indium Tin Oxide ◽

Light Emitting Diode ◽

Electrical Current ◽

High Threshold ◽

Diamond Coatings ◽

Ito Thin Films ◽

Order Of Magnitude

Transparent conductive oxides (TCOs) known as indium tin oxide (ITO) and fluorine tin oxide (FTO) deposited on glass were compared by different techniques and also as anodes in organic light-emitting diode (OLED) devices with same structure. ITO produced at laboratory was compared with the commercial one manufactured by different companies: Diamond Coatings, Displaytech and Sigma-Aldrich, and FTO produced at laboratory was compared with the commercial one manufactured by Flexitec Company. FTO thin films produced at laboratory presented the lowest performance measured by Hall effect technique and also by I-V curve of OLED device with low electrical current and high threshold voltage. ITO thin films produced at laboratory presented elevated sheet resistance in comparison with commercial ITOs (approximately one order of magnitude greater), that can be related by a high number of defects as discontinuity of the chemical lattice or low crystalline structure. In the assembly of OLED devices with ITO and FTO produced at laboratory, neither presented luminances. ITO manufactured by Sigma-Aldrich company presented better electrical and optical characteristics, as low electrical resistivity, good wettability, favorable transmittance, perfect physicalchemical stability and lowest threshold voltage (from 3 to 4.5 V) for OLED devices.

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Fabrication of carbon dioxide gas sensor and its alarm system using indium tin oxide (ITO) thin films

Sensors and Actuators B Chemical ◽

10.1016/0925-4005(94)01247-4 ◽

1994 ◽

Vol 21 (3) ◽

pp. 193-197 ◽

Cited By ~ 30

Author(s):

N.G. Patel ◽

K.K. Makhija ◽

C.J. Panchal

Keyword(s):

Thin Films ◽

Carbon Dioxide ◽

Gas Sensor ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Alarm System ◽

Carbon Dioxide Gas ◽

Ito Thin Films

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Effects of the Concentration of Indium-tin-oxide (ITO) Ink on the Characteristics of Directly-printed ITO Thin Films

Journal of the Korean Physical Society ◽

10.3938/jkps.57.1794 ◽

2010 ◽

Vol 57 (6(1)) ◽

pp. 1794-1798 ◽

Cited By ~ 5

Author(s):

Jong-Woong Kim ◽

Jangwoo Choi ◽

Sung-Jei Hong ◽

Jeong-In Han ◽

Young-Sung Kim

Keyword(s):

Thin Films ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Ito Thin Films

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Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

Materials Advances ◽

10.1039/d0ma00872a ◽

2021 ◽

Author(s):

Longfei Song ◽

Tony Schenk ◽

Emmanuel Defay ◽

Sebastjan Glinsek

Keyword(s):

Thin Film ◽

Thin Films ◽

Low Temperature ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Oxide Thin Film ◽

Low Temperature Combustion ◽

Transparent Electronics ◽

Temperature Combustion ◽

Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

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