Electrical characterization of 0.6MgAl2O4-0.4La1−x Sr x CrO3 high temperature NTC thermistors

2017 ◽  
Vol 28 (21) ◽  
pp. 16036-16043
Author(s):  
Ping Luo ◽  
Bo Zhang ◽  
Qing Zhao ◽  
Donglin He ◽  
Aimin Chang
Keyword(s):  
High Temperature ◽  
Electrical Characterization ◽  
Ntc Thermistors

Electrical Characterization of ENEA High Temperature Superconducting Cable

2015 ◽  
Vol 25 (3) ◽  
pp. 1-4 ◽  
Author(s):  
A. Augieri ◽  
G. De Marzi ◽  
G. Celentano ◽  
L. Muzzi ◽  
G. Tomassetti ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characterization ◽  
High Temperature Superconducting

High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift

Nanoscale ◽  
2015 ◽  
Vol 7 (40) ◽  
pp. 16625-16630 ◽  
Author(s):  
Faruk Dirisaglik ◽  
Gokhan Bakan ◽  
Zoila Jurado ◽  
Sadid Muneer ◽  
Mustafa Akbulut ◽  
...  
Keyword(s):  
High Temperature ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Materials ◽  
Electrical Characterization ◽  
Metastable Phases ◽  
Crystallization Dynamics

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

2002 ◽  
Vol 389-393 ◽  
pp. 1285-1288 ◽  
Author(s):  
Uwe Zimmermann ◽  
John Österman ◽  
Jie Zhang ◽  
Anne Henry ◽  
Anders Hallén
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Electrical Characterization ◽  
Epitaxial Layers

Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C

2016 ◽  
Vol 858 ◽  
pp. 885-888 ◽  
Author(s):  
Yuichiro Nanen ◽  
Masatoshi Aketa ◽  
Yuki Nakano ◽  
Hirokazu Asahara ◽  
Takashi Nakamura
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Electrical Characterization ◽  
Transfer Time ◽  
Static Characteristics ◽  
Power Mosfets ◽  
Turn On ◽  
Switching Losses ◽  
Gate Resistance

Dynamic and static characteristics of SiC power MOSFETs at high temperature up to 380°C were investigated. Investigated devices have exhibited a behavior as a normally-off MOSFET even at such high temperature as 380°C. Temperature dependence of the MOSFET characteristics are reported in this paper, such as threshold voltage (VTH), on-resistance, internal gate resistance, and turn-on and turn-off losses (EON, EOFF). EON decreases and EOFF increases with increased temperature. Temperature dependence of switching losses is affected by transfer time of VDS, which was mainly determined from VTH.

Microstructural and High-Temperature Electrical Characterization of La1 ? xSrxFeO3 ? ?

2005 ◽  
Vol 14 (3) ◽  
pp. 193-198 ◽  
Author(s):  
Edward V. Bongio ◽  
Hamilton Black ◽  
Fabienne C. Raszewski ◽  
Doreen Edwards ◽  
Caspar J. McConville ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characterization

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

2009 ◽  
Vol 615-617 ◽  
pp. 715-718 ◽  
Author(s):  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Robin L. Kelley ◽  
David C. Sheridan
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Large Area ◽  
Enhancement Mode ◽  
High Temperature Operation

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

High-Temperature Structural and Electrical Characterization of Reduced Oxygen-Deficient Ruddlesden-Popper Nickelates

2018 ◽  
Vol 2018 (28) ◽  
pp. 3320-3329 ◽  
Author(s):  
Ekaterina Kravchenko ◽  
Alexandra Neagu ◽  
Kiryl Zakharchuk ◽  
Jekabs Grins ◽  
Gunnar Svensson ◽  
...  
Keyword(s):  
High Temperature ◽  
Electrical Characterization

In Situ High Temperature Electrical Characterization of RF Sputtered SiCBN Thin Films

2007 ◽  
Vol 154 (10) ◽  
pp. H875 ◽  
Author(s):  
A. Vijayakumar ◽  
R. M. Todi ◽  
V. O. Todi ◽  
K. B. Sundaram
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Electrical Characterization
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