Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C

Dynamic and static characteristics of SiC power MOSFETs at high temperature up to 380°C were investigated. Investigated devices have exhibited a behavior as a normally-off MOSFET even at such high temperature as 380°C. Temperature dependence of the MOSFET characteristics are reported in this paper, such as threshold voltage (VTH), on-resistance, internal gate resistance, and turn-on and turn-off losses (EON, EOFF). EON decreases and EOFF increases with increased temperature. Temperature dependence of switching losses is affected by transfer time of VDS, which was mainly determined from VTH.

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Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.963.797 ◽

2019 ◽

Vol 963 ◽

pp. 797-800 ◽

Cited By ~ 4

Author(s):

Ajit Kanale ◽

Ki Jeong Han ◽

B. Jayant Baliga ◽

Subhashish Bhattacharya

Keyword(s):

High Temperature ◽

Short Circuit ◽

Switching Loss ◽

Switching Circuit ◽

Inductive Load ◽

Circuit Performance ◽

Switching Performance ◽

Turn On ◽

Switching Losses ◽

High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

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Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.961 ◽

2010 ◽

Vol 645-648 ◽

pp. 961-964 ◽

Cited By ~ 3

Author(s):

Jang Kwon Lim ◽

Mietek Bakowski ◽

Hans Peter Nee

Keyword(s):

Threshold Voltage ◽

Doping Concentration ◽

Channel Length ◽

Channel Width ◽

Temperature Range ◽

Turn On ◽

Switching Losses ◽

Order Of Magnitude ◽

Gate Resistance

The 1.2 kV 4H-SiC buried-grid vertical JFET structures with Normally-on (N-on) and Normally-off (N-off) design were investigated by simulations. The conduction and switching properties were determined in the temperature range from -50°C to 250°C. In this paper, the characteristics of the N-on designs with threshold voltage (Vth) of -50 V and -10 V are compared with the N-off design (Vth=0). The presented data are for devices with the same channel length at 250°C. The results show that the on-resistance (Ron) decreases with increasing channel doping concentration and decreasing channel width. The presented turn-on, Eon, and turn-off, Eoff, energies per pulse are calculated under the switching conditions 100 A/cm2 and 600 V with a gate resistance of Rg=1 . For the two N-on designs the total switching losses, Esw=Eon+Eoff, differ less than 30% with Wch 0.7 m. With Wch=0.5 m the switching losses of N-off design are almost one order of magnitude higher than those of the N-on design with Vth = -50 V.

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4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.636 ◽

2015 ◽

Vol 821-823 ◽

pp. 636-639 ◽

Cited By ~ 2

Author(s):

Shi Qian Shao ◽

Wei Cheng Lien ◽

Ayden Maralani ◽

Jim C. Cheng ◽

Kristen L. Dorsey ◽

...

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Harsh Environment ◽

Stable Operation ◽

Temperature Changes ◽

Turn On ◽

Sensing Applications ◽

Depth Study ◽

Fabrication And Characterization

In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree with the simulation ones. The demonstration of the stable operation of the 4H-SiC p-n diodes at high temperature up to 600 °C brings great potentials for 4H-SiC devices and circuits working in harsh environment electronic and sensing applications.

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