Study on lattice constant and magnetic properties of bismuth substituted YIG polycrystal thin film on different substrates prepared by rf magnetron sputtering

2019 ◽  
Vol 30 (8) ◽  
pp. 7410-7414
Author(s):  
Shijie Tan ◽  
Yingli Liu ◽  
Jinsong Chen ◽  
Lu Yang ◽  
Jianghe Lan ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Lattice Constant ◽  
Rf Magnetron Sputtering

Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering

2021 ◽  
Vol 127 (7) ◽  
Author(s):  
Du-Cheng Tsai ◽  
Feng-Kuan Chen ◽  
Zue-Chin Chang ◽  
Bing-Hau Kuo ◽  
Erh-Chiang Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Al2o3 Doping

Electron Conduction of Nd0.6Sr0.4FeO3−δ Thin Film with Oxygen Vacancies Prepared by RF Magnetron Sputtering

2017 ◽  
Vol 86 (7) ◽  
pp. 074704 ◽  
Author(s):  
Wataru Namiki ◽  
Takashi Tsuchiya ◽  
Makoto Takayanagi ◽  
Shoto Furuichi ◽  
Makoto Minohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Rf Magnetron Sputtering ◽  
Electron Conduction

125MeV Si9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

2011 ◽  
Vol 257 (6) ◽  
pp. 2134-2141 ◽  
Author(s):  
K. Elayaraja ◽  
M.I. Ahymah Joshy ◽  
R.V. Suganthi ◽  
S. Narayana Kalkura ◽  
M. Palanichamy ◽  
...  
Keyword(s):  
Thin Film ◽  
Calcium Phosphate ◽  
Magnetron Sputtering ◽  
Ion Irradiation ◽  
Rf Magnetron Sputtering

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

2003 ◽  
Vol 82 (7) ◽  
pp. 1117-1119 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
G. Nunes
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film

Perpendicular Magnetic Anisotropy in Pt/Co/AlO Trilayer Structures Depending on AlO Thickness and Fabrication Method

2014 ◽  
Vol 616 ◽  
pp. 247-251
Author(s):  
Tim Yang ◽  
Z.Q. Wang ◽  
Makoto Kohda ◽  
Takeshi Seki ◽  
Koki Takanashi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Layer Deposition ◽  
Significant Damage ◽  
Arbitrary Thickness ◽  
High Kinetic Energy

We investigate the perpendicular magnetic anisotropy dependence on the AlO capping layer in Pt/Co/AlO films. AlO was deposited on Pt/Co films by RF magnetron sputtering and atomic layer deposition (ALD) with varying thickness. It is found that the prolonged deposition of thick AlO layers by RF magnetron sputtering causes significant damage to the Pt/Co underneath while AlO layers formed by ALD can be of arbitrary thickness with no damage to the magnetic properties of the films. The decline of the magnetic properties can be attributed to the method of AlO deposition for each process. In the RF magnetron sputtering, AlO atoms with high kinetic energy are ejected from a sputter target resulting in the degradation of Pt/Co films, while the process of deposition of AlO by ALD is governed by a series of chemically reactive condensations allowing for arbitrary deposition thickness of AlO.

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